@article{ART002639490},
author={Sung-Chul Lee and Jaeha Myung and Yongnam Kim and Minseok Jeon and Dong-Won Lee and Oh Jong Min and Bae-Yeon Kim},
title={Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2020},
volume={30},
number={5},
pages={200-207},
doi={10.6111/JKCGCT.2020.30.5.200}
TY - JOUR
AU - Sung-Chul Lee
AU - Jaeha Myung
AU - Yongnam Kim
AU - Minseok Jeon
AU - Dong-Won Lee
AU - Oh Jong Min
AU - Bae-Yeon Kim
TI - Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2020
VL - 30
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 200
EP - 207
SN - 1225-1429
AB - MoSi2, (Mo1/2W1/2)Si2, and WSi2 powders were synthesized by self-propagating high-temperature synthesis (SHS)method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600°C in ambientatmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500°C. XRD structure analysis and DTA/TG data showed that MoO3 was formed with 500°C heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200°C heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi2 and (Mo1/2W1/2)Si2 specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi2 because of oxidation reaction at low temperature.
KW - MoSi2;(Mo1/2W1/2)Si2;WSi2;SHS;Oxidation;Pest
DO - 10.6111/JKCGCT.2020.30.5.200
ER -
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min and Bae-Yeon Kim. (2020). Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements. Journal of the Korean Crystal Growth and Crystal Technology, 30(5), 200-207.
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min and Bae-Yeon Kim. 2020, "Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements", Journal of the Korean Crystal Growth and Crystal Technology, vol.30, no.5 pp.200-207. Available from: doi:10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min, Bae-Yeon Kim "Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements" Journal of the Korean Crystal Growth and Crystal Technology 30.5 pp.200-207 (2020) : 200.
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min, Bae-Yeon Kim. Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements. 2020; 30(5), 200-207. Available from: doi:10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min and Bae-Yeon Kim. "Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements" Journal of the Korean Crystal Growth and Crystal Technology 30, no.5 (2020) : 200-207.doi: 10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee; Jaeha Myung; Yongnam Kim; Minseok Jeon; Dong-Won Lee; Oh Jong Min; Bae-Yeon Kim. Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements. Journal of the Korean Crystal Growth and Crystal Technology, 30(5), 200-207. doi: 10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee; Jaeha Myung; Yongnam Kim; Minseok Jeon; Dong-Won Lee; Oh Jong Min; Bae-Yeon Kim. Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements. Journal of the Korean Crystal Growth and Crystal Technology. 2020; 30(5) 200-207. doi: 10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min, Bae-Yeon Kim. Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements. 2020; 30(5), 200-207. Available from: doi:10.6111/JKCGCT.2020.30.5.200
Sung-Chul Lee, Jaeha Myung, Yongnam Kim, Minseok Jeon, Dong-Won Lee, Oh Jong Min and Bae-Yeon Kim. "Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements" Journal of the Korean Crystal Growth and Crystal Technology 30, no.5 (2020) : 200-207.doi: 10.6111/JKCGCT.2020.30.5.200