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Oxidation behavior of (Mo₁₋xWx)Si₂ high-temperature heating elements

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(5), pp.200-207
  • DOI : 10.6111/JKCGCT.2020.30.5.200
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : August 25, 2020
  • Accepted : October 20, 2020
  • Published : October 31, 2020

Sung-Chul Lee 1 Jaeha Myung 1 Yongnam Kim 2 Minseok Jeon 2 Dong-Won Lee ORD ID 2 Oh Jong Min ORD ID 3 Bae-Yeon Kim 1

1인천대학교
2한국산업기술시험원
3광운대학교

Accredited

ABSTRACT

MoSi2, (Mo1/2W1/2)Si2, and WSi2 powders were synthesized by self-propagating high-temperature synthesis (SHS)method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600°C in ambientatmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500°C. XRD structure analysis and DTA/TG data showed that MoO3 was formed with 500°C heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200°C heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi2 and (Mo1/2W1/2)Si2 specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi2 because of oxidation reaction at low temperature.

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