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Dielectric and conductivity properties of defect double Perovskite La1/3TaO3 single crystal

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(6), pp.215~219
  • DOI : 10.6111/JKCGCT.2020.30.6.215
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : October 26, 2020
  • Accepted : November 13, 2020
  • Published : December 31, 2020

Jeong Ho Sohn 1

1가야대학교

Accredited

ABSTRACT

After the specimen of A-site defect double Perovskite La1/3TaO3 single crystal was manufactured, the dielectricproperties have been studied between the temperature range of 10 and 800 K. Under 500 K, a paraelectric behavior hasbeen shown, and above 550 K, a dielectric anomaly and a thermal history of dielectric constant has been shown. Anactivation energy by measurement of ac-conductivity has been the largest with 1.83 eV in the areas below 560 K, 0.35 eVin the areas of 560~690 K, and 0.28 eV in the areas of high temperature above 690 K. From these results, it is assumedthat in the areas below 500 K, La3+-ion and vacancy-site are arranged in disorder to maintain a paraelectric phase. And inthe areas near 560 K with the highest activation energy, a dielectric anomaly is attributes to rearrangement of La3+-ion dueto conduction to vacancy-site or jumping.

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