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Gas phase synthesis of Ga2O3 nanoparticles from gallium metal

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(6), pp.220-225
  • DOI : 10.6111/JKCGCT.2020.30.6.220
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : October 12, 2020
  • Accepted : October 30, 2020
  • Published : December 31, 2020

Jung Won Park 1 Chang Min Won 2 Jun Beom Kwon 1 Hyukjae Lee 3

1퀀타머티리얼즈
2안동대학교 재료공학과
3안동대학교

Accredited

ABSTRACT

Gallium oxide nano-powder, the key starting material for IGZO target, is fabricated by gas phase synthesis using a new apparatus consist of reaction, transportation, and collection parts. As a result of gallium metal evaporation above 1150°C, Ga2O3 nano-powders, are successfully synthesized. The SEM images of the synthesized powders displace the spherical shaped powders without severe agglomeration. X-ray diffraction and PSA analysis show that the higher temperature at the reaction part results in the better crystallinity and larger powder size of the synthesized Ga2O3. To see the applicability to IGZO target, Ga2O3 nano-powders synthesized at 1250°C are mixed with indium oxide and zinc oxide (In2O3 : Ga2O3 : ZnO=1 : 1 : 1), and then sintered at 1400~1500°C. The highest sintered density of 5.83 g/㎤(= 91 % of relative density) is achieved when sintered at 1450°C, showing better sinterability compared to the commercially available Ga2O3 powder, which has 5.61 g/㎤ of sintered density at the same condition.

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