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@article{ART002686345},
author={Lee Han Sol and KIM SO YOON and Jungbok Lee and Hyung Soo Ahn and Kyoung Hwa Kim and Min Yang},
title={Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2021},
volume={31},
number={1},
pages={1-7},
doi={10.6111/JKCGCT.2021.31.1.001}

TY - JOUR
AU - Lee Han Sol
AU - KIM SO YOON
AU - Jungbok Lee
AU - Hyung Soo Ahn
AU - Kyoung Hwa Kim
AU - Min Yang
TI - Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2021
VL - 31
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 7
SN - 1225-1429
AB - ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structureor a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface rough nessand defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. Forthis, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated byanalyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. Inaddition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 afterphase transition were also investigated.
KW - Ga2O3;MOCVD. Polymorph;Phase transition;Heteroepitaxy
DO - 10.6111/JKCGCT.2021.31.1.001
ER -

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim and Min Yang. (2021). Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition. Journal of the Korean Crystal Growth and Crystal Technology, 31(1), 1-7.

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim and Min Yang. 2021, "Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition", Journal of the Korean Crystal Growth and Crystal Technology, vol.31, no.1 pp.1-7. Available from: doi:10.6111/JKCGCT.2021.31.1.001

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang "Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition" Journal of the Korean Crystal Growth and Crystal Technology 31.1 pp.1-7 (2021) : 1.

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang. Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition. 2021; 31(1), 1-7. Available from: doi:10.6111/JKCGCT.2021.31.1.001

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim and Min Yang. "Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition" Journal of the Korean Crystal Growth and Crystal Technology 31, no.1 (2021) : 1-7.doi: 10.6111/JKCGCT.2021.31.1.001

Lee Han Sol; KIM SO YOON; Jungbok Lee; Hyung Soo Ahn; Kyoung Hwa Kim; Min Yang. Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition. Journal of the Korean Crystal Growth and Crystal Technology, 31(1), 1-7. doi: 10.6111/JKCGCT.2021.31.1.001

Lee Han Sol; KIM SO YOON; Jungbok Lee; Hyung Soo Ahn; Kyoung Hwa Kim; Min Yang. Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition. Journal of the Korean Crystal Growth and Crystal Technology. 2021; 31(1) 1-7. doi: 10.6111/JKCGCT.2021.31.1.001

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim, Min Yang. Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition. 2021; 31(1), 1-7. Available from: doi:10.6111/JKCGCT.2021.31.1.001

Lee Han Sol, KIM SO YOON, Jungbok Lee, Hyung Soo Ahn, Kyoung Hwa Kim and Min Yang. "Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition" Journal of the Korean Crystal Growth and Crystal Technology 31, no.1 (2021) : 1-7.doi: 10.6111/JKCGCT.2021.31.1.001