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Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2021, 31(1), pp.1~7
  • DOI : 10.6111/JKCGCT.2021.31.1.001
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : November 26, 2020
  • Accepted : December 18, 2020
  • Published : February 28, 2021

Lee Han Sol 1,  KIM SO YOON 1,  Jungbok Lee 1,  Hyung Soo Ahn 1,  Kyoung Hwa Kim 2,  Min Yang 1

1한국해양대학교
2한국해양대학교 화합물반도체공정교육센터

Accredited

ABSTRACT

ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structureor a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface rough nessand defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. Forthis, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated byanalyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. Inaddition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 afterphase transition were also investigated.

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