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@article{ART002710360},
author={Jeong-Hui Kim and Woo-Yeon Kim and Mi-Seon Park and Yeon-Suk Jang and Lee, Won Jae},
title={High quality SiC single crystal growth by using NbC-coated crucible},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2021},
volume={31},
number={2},
pages={63-68},
doi={10.6111/JKCGCT.2021.31.2.063}

TY - JOUR
AU - Jeong-Hui Kim
AU - Woo-Yeon Kim
AU - Mi-Seon Park
AU - Yeon-Suk Jang
AU - Lee, Won Jae
TI - High quality SiC single crystal growth by using NbC-coated crucible
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2021
VL - 31
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 63
EP - 68
SN - 1225-1429
AB - This study was focused to investigate the effect of NbC-coated crucible on the quality of the SiC crystals. Then,the different properties between SiC crystals grown in a conventional graphite crucible and NbC-coated crucible were systematically compared. SiC crystals were grown using the Physical Vapor Transport (PVT) method at a temperature of 2300°C and a pressure of 5 Torr in Ar atmosphere. After grinding and polishing, the polytype of the grown SiC crystal was analyzed using Raman spectroscopy, and crystallinity was confirmed by HR-XRD. Furthermore, the defect density and the concentration of impurities were analyzed by an optical microscope and a SIMS, respectively.
KW - Silicon carbide;NbC coated crucible;Physical vapor transport;Crystal quality;Single crystal growth
DO - 10.6111/JKCGCT.2021.31.2.063
ER -

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang and Lee, Won Jae. (2021). High quality SiC single crystal growth by using NbC-coated crucible. Journal of the Korean Crystal Growth and Crystal Technology, 31(2), 63-68.

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang and Lee, Won Jae. 2021, "High quality SiC single crystal growth by using NbC-coated crucible", Journal of the Korean Crystal Growth and Crystal Technology, vol.31, no.2 pp.63-68. Available from: doi:10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang, Lee, Won Jae "High quality SiC single crystal growth by using NbC-coated crucible" Journal of the Korean Crystal Growth and Crystal Technology 31.2 pp.63-68 (2021) : 63.

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang, Lee, Won Jae. High quality SiC single crystal growth by using NbC-coated crucible. 2021; 31(2), 63-68. Available from: doi:10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang and Lee, Won Jae. "High quality SiC single crystal growth by using NbC-coated crucible" Journal of the Korean Crystal Growth and Crystal Technology 31, no.2 (2021) : 63-68.doi: 10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim; Woo-Yeon Kim; Mi-Seon Park; Yeon-Suk Jang; Lee, Won Jae. High quality SiC single crystal growth by using NbC-coated crucible. Journal of the Korean Crystal Growth and Crystal Technology, 31(2), 63-68. doi: 10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim; Woo-Yeon Kim; Mi-Seon Park; Yeon-Suk Jang; Lee, Won Jae. High quality SiC single crystal growth by using NbC-coated crucible. Journal of the Korean Crystal Growth and Crystal Technology. 2021; 31(2) 63-68. doi: 10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang, Lee, Won Jae. High quality SiC single crystal growth by using NbC-coated crucible. 2021; 31(2), 63-68. Available from: doi:10.6111/JKCGCT.2021.31.2.063

Jeong-Hui Kim, Woo-Yeon Kim, Mi-Seon Park, Yeon-Suk Jang and Lee, Won Jae. "High quality SiC single crystal growth by using NbC-coated crucible" Journal of the Korean Crystal Growth and Crystal Technology 31, no.2 (2021) : 63-68.doi: 10.6111/JKCGCT.2021.31.2.063