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@article{ART002710362},
author={Young-Hoon Yun},
title={Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2021},
volume={31},
number={2},
pages={73-77},
doi={10.6111/JKCGCT.2021.31.2.073}

TY - JOUR
AU - Young-Hoon Yun
TI - Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2021
VL - 31
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 73
EP - 77
SN - 1225-1429
AB - Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600°C in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002)plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping,only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4×10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2μm, showing relatively a low specific resistance of 1.0×10-3 Ω·cm
KW - Ga-doped ZnO thin film;RF magnetron sputtering;Electrical resistance;Atmosphere gases
DO - 10.6111/JKCGCT.2021.31.2.073
ER -

Young-Hoon Yun. (2021). Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method. Journal of the Korean Crystal Growth and Crystal Technology, 31(2), 73-77.

Young-Hoon Yun. 2021, "Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method", Journal of the Korean Crystal Growth and Crystal Technology, vol.31, no.2 pp.73-77. Available from: doi:10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun "Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method" Journal of the Korean Crystal Growth and Crystal Technology 31.2 pp.73-77 (2021) : 73.

Young-Hoon Yun. Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method. 2021; 31(2), 73-77. Available from: doi:10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun. "Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method" Journal of the Korean Crystal Growth and Crystal Technology 31, no.2 (2021) : 73-77.doi: 10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun. Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method. Journal of the Korean Crystal Growth and Crystal Technology, 31(2), 73-77. doi: 10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun. Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method. Journal of the Korean Crystal Growth and Crystal Technology. 2021; 31(2) 73-77. doi: 10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun. Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method. 2021; 31(2), 73-77. Available from: doi:10.6111/JKCGCT.2021.31.2.073

Young-Hoon Yun. "Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method" Journal of the Korean Crystal Growth and Crystal Technology 31, no.2 (2021) : 73-77.doi: 10.6111/JKCGCT.2021.31.2.073