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@article{ART002728428},
author={Geug Tae Kim and Moo Hyun Kwon},
title={Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2021},
volume={31},
number={3},
pages={127-136},
doi={10.6111/JKCGCT.2021.31.3.127}

TY - JOUR
AU - Geug Tae Kim
AU - Moo Hyun Kwon
TI - Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2021
VL - 31
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 127
EP - 136
SN - 1225-1429
AB - This paper is dedicated to numerical simulation for diffusion-advective convection in a square cavity duringphysical vapor transport of Hg2Br2. Flow characteristics of the temperature difference between the source and crystal regions, 50°C (300°C→250°C), partial pressures of component argon of 20 Torr and 100 Torr are investigated and presented as velocityvectors and streamlines, isotherms and iso-mass concentrations contours. Moreover, alterations of average Nusselt and averageSherwood numbers with (a) the source and crystal regions, (b) the pressures of component argon of 20 Torr and 100 Torrare analyzed and addressed in details. Both average Nusselt and average Sherwood numbers are seen to decrease with theincreasing values of the partial pressures of component argon. Also, it is found that for the two different partial pressuresof component argon, average Nusselt numbers at the source region are greater than at the crystal region, and inversely,average Sherwood numbers at the crystal region are greater than the source region by a factor of 3.
KW - Diffusion-advection;Nusselt number;Sherwood number;Physical vapor transport;Hg2Br2
DO - 10.6111/JKCGCT.2021.31.3.127
ER -

Geug Tae Kim and Moo Hyun Kwon. (2021). Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2. Journal of the Korean Crystal Growth and Crystal Technology, 31(3), 127-136.

Geug Tae Kim and Moo Hyun Kwon. 2021, "Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2", Journal of the Korean Crystal Growth and Crystal Technology, vol.31, no.3 pp.127-136. Available from: doi:10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim, Moo Hyun Kwon "Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2" Journal of the Korean Crystal Growth and Crystal Technology 31.3 pp.127-136 (2021) : 127.

Geug Tae Kim, Moo Hyun Kwon. Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2. 2021; 31(3), 127-136. Available from: doi:10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim and Moo Hyun Kwon. "Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2" Journal of the Korean Crystal Growth and Crystal Technology 31, no.3 (2021) : 127-136.doi: 10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim; Moo Hyun Kwon. Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2. Journal of the Korean Crystal Growth and Crystal Technology, 31(3), 127-136. doi: 10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim; Moo Hyun Kwon. Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2. Journal of the Korean Crystal Growth and Crystal Technology. 2021; 31(3) 127-136. doi: 10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim, Moo Hyun Kwon. Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2. 2021; 31(3), 127-136. Available from: doi:10.6111/JKCGCT.2021.31.3.127

Geug Tae Kim and Moo Hyun Kwon. "Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2" Journal of the Korean Crystal Growth and Crystal Technology 31, no.3 (2021) : 127-136.doi: 10.6111/JKCGCT.2021.31.3.127