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Effect of O2/Ar+O2 concentration on phase stability of transparent Mn doped SnO2 monolayer film

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2021, 31(4), pp.154-158
  • DOI : 10.6111/JKCGCT.2021.31.4.154
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : July 26, 2021
  • Accepted : August 6, 2021
  • Published : August 31, 2021

Taekeun Kim 1 Jang, Gun-eik 2

1충북대학교 신소재공학과
2충북대학교

Accredited

ABSTRACT

The optical transmittance of Mn-doped SnO2 monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O2/Ar+O2 concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O2/Ar+O2 gas concentration ratio. Based on XPS spectra analysis, the Sn 3d5/2 peak of Mn-doped SnO2 single layer shifted slightly from 486.40 to 486.58 and O1s peak a lso shifted f rom 530.20 to 530.33 eV with increase the O2/Ar+O2 concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO2 coexisted in the sputtered Mn-doped SnO2 monolayer film.

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