Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase (유기 금속 화학 증착법(MOCVD)으로 4H-SiC 기판에 성장한 Ga2O3 박막과 결정 상에 따른 특성)

KIM SO YOON (김소윤); Jungbok Lee (이정복); Hyung Soo Ahn (안형수); Kyoung Hwa Kim (김경화); Min Yang (양민)

doi:10.6111/JKCGCT.2021.31.4.149

Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2021, 31(4), pp.149-153
DOI : 10.6111/JKCGCT.2021.31.4.149
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : June 30, 2021
Accepted : July 12, 2021
Published : August 31, 2021

KIM SO YOON ¹, Jungbok Lee ¹, Hyung Soo Ahn ¹, Kyoung Hwa Kim ¹, Min Yang ¹

¹한국해양대학교

Accredited

ABSTRACT

ε-Ga2O3 thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga2O3 were grown at a growth temperature of 665°C and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga2O3 had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga2O3 thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga2O3 thin film. The phase transformed β-Ga2O3 film showed better crystal quality than directly grown one.

KEYWORDS

MOCVD, Structural properties, Ga2O3, 4H-SiC, Power device, Compound semiconductor, Oxide semiconductor

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Growth of Ga2O3 films on 4H-SiC substrates by metal organic chemical vapor deposition and their characteristics depend on crystal phase

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