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Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2021, 31(6), pp.233-239
  • DOI : 10.6111/JKCGCT.2021.31.6.223
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : November 23, 2021
  • Accepted : December 6, 2021
  • Published : December 31, 2021

Ji-Yeon Seo 1 Tae-Kyu Kim 2 SHIN Yunji 1 Seongmin Jeong ORD ID 1 Si-Young Bae ORD ID 1

1한국세라믹기술원
2부산대학교

Accredited

ABSTRACT

In this study, Ga2O3/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga2O3 materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga2O3 layer was grown in the growth temperature range of from 450~600°C by mist chemical vapor deposition. We found that layer separation happens at the Ga2O3/diamond interface at the growth temperature of 500°C. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing thethermal properties at Ga2O3/diamond interface.

Citation status

* References for papers published after 2023 are currently being built.

This paper was written with support from the National Research Foundation of Korea.