@article{ART002790287},
author={Ji-Yeon Seo and Tae-Kyu Kim and SHIN Yunji and Seongmin Jeong and Si-Young Bae},
title={Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2021},
volume={31},
number={6},
pages={233-239},
doi={10.6111/JKCGCT.2021.31.6.223}
TY - JOUR
AU - Ji-Yeon Seo
AU - Tae-Kyu Kim
AU - SHIN Yunji
AU - Seongmin Jeong
AU - Si-Young Bae
TI - Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2021
VL - 31
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 233
EP - 239
SN - 1225-1429
AB - In this study, Ga2O3/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga2O3 materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga2O3 layer was grown in the growth temperature range of from 450~600°C by mist chemical vapor deposition. We found that layer separation happens at the Ga2O3/diamond interface at the growth temperature of 500°C. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing thethermal properties at Ga2O3/diamond interface.
KW - Ga2O3;Diamond;Annealing;Phase transition;Hetero structure
DO - 10.6111/JKCGCT.2021.31.6.223
ER -
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong and Si-Young Bae. (2021). Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates. Journal of the Korean Crystal Growth and Crystal Technology, 31(6), 233-239.
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong and Si-Young Bae. 2021, "Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates", Journal of the Korean Crystal Growth and Crystal Technology, vol.31, no.6 pp.233-239. Available from: doi:10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong, Si-Young Bae "Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 31.6 pp.233-239 (2021) : 233.
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong, Si-Young Bae. Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates. 2021; 31(6), 233-239. Available from: doi:10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong and Si-Young Bae. "Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 31, no.6 (2021) : 233-239.doi: 10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo; Tae-Kyu Kim; SHIN Yunji; Seongmin Jeong; Si-Young Bae. Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates. Journal of the Korean Crystal Growth and Crystal Technology, 31(6), 233-239. doi: 10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo; Tae-Kyu Kim; SHIN Yunji; Seongmin Jeong; Si-Young Bae. Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates. Journal of the Korean Crystal Growth and Crystal Technology. 2021; 31(6) 233-239. doi: 10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong, Si-Young Bae. Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates. 2021; 31(6), 233-239. Available from: doi:10.6111/JKCGCT.2021.31.6.223
Ji-Yeon Seo, Tae-Kyu Kim, SHIN Yunji, Seongmin Jeong and Si-Young Bae. "Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates" Journal of the Korean Crystal Growth and Crystal Technology 31, no.6 (2021) : 233-239.doi: 10.6111/JKCGCT.2021.31.6.223