Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates (다결정 산화갈륨/다이아몬드 이종 박막 성장 및 열처리 효과 연구)

Ji-Yeon Seo (서지연); Taegyu Kim (김태규); Yun-Ji Shin (신윤지); Seong-Min Jeong (정성민); Si-Young Bae (배시영)

doi:10.6111/JKCGCT.2021.31.6.223

Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2021, 31(6), pp.233~239
DOI : 10.6111/JKCGCT.2021.31.6.223
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : November 23, 2021
Accepted : December 6, 2021
Published : December 31, 2021

Ji-Yeon Seo ¹, Taegyu Kim ², Yun-Ji Shin ¹, Seong-Min Jeong ¹, Si-Young Bae ¹

¹한국세라믹기술원
²부산대학교

Accredited

ABSTRACT

In this study, Ga2O3/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga2O3 materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga2O3 layer was grown in the growth temperature range of from 450~600°C by mist chemical vapor deposition. We found that layer separation happens at the Ga2O3/diamond interface at the growth temperature of 500°C. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing thethermal properties at Ga2O3/diamond interface.

KEYWORDS

Ga2O3, Diamond, Annealing, Phase transition, Hetero structure

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This paper was written with support from the National Research Foundation of Korea.

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates

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KEYWORDS

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