Growth of ring-shaped SiC single crystal via physical vapor transport method (PVT 방법에 의한 링 모양의 SiC 단결정 성장)

Woo-Yeon Kim (김우연); Tae-Wan Je (제태완); Jun-Hyuck Na (나준혁); Su-Min Choi (최수민); Ha-Lin Lee (이하린); Hui-Yeon Jang (장희연); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Yeon-Suk Jang (정은진); Jin-Ki Kang (강진기); Won-Jae Lee (이원재)

doi:10.6111/JKCGCT.2022.32.1.001

Growth of ring-shaped SiC single crystal via physical vapor transport method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2022, 32(1), pp.1~6
DOI : 10.6111/JKCGCT.2022.32.1.001
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : January 22, 2022
Accepted : February 7, 2022
Published : February 28, 2022

Woo-Yeon Kim ¹, Tae-Wan Je ¹, Jun-Hyuck Na ¹, Su-Min Choi ¹, Ha-Lin Lee ¹, Hui-Yeon Jang ¹, Mi-Seon Park ¹, Yeon-Suk Jang ¹, Yeon-Suk Jang ², Jin-Ki Kang ³, Won-Jae Lee ¹

¹동의대학교
²(주)KXT
³(주)악셀

Accredited

ABSTRACT

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical VaporTransport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindricalgraphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiCsingle crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasmaetching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring,indicating better plasma resistance of PVT-SiC focus ring.

KEYWORDS

Silicon carbide, Single crystal growth, Focus ring, PVT

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