@article{ART002814700},
author={Woo-Yeon Kim and Tae-Wan Je and Jun-Hyuck Na and Su-Min Choi and Ha-Lin Lee and Hui-Yeon Jang and Mi-Seon Park and Yeon-Suk Jang and Yeon-Suk Jang and Jin-Ki Kang and Lee, Won Jae},
title={Growth of ring-shaped SiC single crystal via physical vapor transport method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={1},
pages={1-6},
doi={10.6111/JKCGCT.2022.32.1.001}
TY - JOUR
AU - Woo-Yeon Kim
AU - Tae-Wan Je
AU - Jun-Hyuck Na
AU - Su-Min Choi
AU - Ha-Lin Lee
AU - Hui-Yeon Jang
AU - Mi-Seon Park
AU - Yeon-Suk Jang
AU - Yeon-Suk Jang
AU - Jin-Ki Kang
AU - Lee, Won Jae
TI - Growth of ring-shaped SiC single crystal via physical vapor transport method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 6
SN - 1225-1429
AB - In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical VaporTransport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindricalgraphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiCsingle crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasmaetching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring.
The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring,indicating better plasma resistance of PVT-SiC focus ring.
KW - Silicon carbide;Single crystal growth;Focus ring;PVT
DO - 10.6111/JKCGCT.2022.32.1.001
ER -
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang and Lee, Won Jae. (2022). Growth of ring-shaped SiC single crystal via physical vapor transport method. Journal of the Korean Crystal Growth and Crystal Technology, 32(1), 1-6.
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang and Lee, Won Jae. 2022, "Growth of ring-shaped SiC single crystal via physical vapor transport method", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.1 pp.1-6. Available from: doi:10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang, Lee, Won Jae "Growth of ring-shaped SiC single crystal via physical vapor transport method" Journal of the Korean Crystal Growth and Crystal Technology 32.1 pp.1-6 (2022) : 1.
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang, Lee, Won Jae. Growth of ring-shaped SiC single crystal via physical vapor transport method. 2022; 32(1), 1-6. Available from: doi:10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang and Lee, Won Jae. "Growth of ring-shaped SiC single crystal via physical vapor transport method" Journal of the Korean Crystal Growth and Crystal Technology 32, no.1 (2022) : 1-6.doi: 10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim; Tae-Wan Je; Jun-Hyuck Na; Su-Min Choi; Ha-Lin Lee; Hui-Yeon Jang; Mi-Seon Park; Yeon-Suk Jang; Yeon-Suk Jang; Jin-Ki Kang; Lee, Won Jae. Growth of ring-shaped SiC single crystal via physical vapor transport method. Journal of the Korean Crystal Growth and Crystal Technology, 32(1), 1-6. doi: 10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim; Tae-Wan Je; Jun-Hyuck Na; Su-Min Choi; Ha-Lin Lee; Hui-Yeon Jang; Mi-Seon Park; Yeon-Suk Jang; Yeon-Suk Jang; Jin-Ki Kang; Lee, Won Jae. Growth of ring-shaped SiC single crystal via physical vapor transport method. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(1) 1-6. doi: 10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang, Lee, Won Jae. Growth of ring-shaped SiC single crystal via physical vapor transport method. 2022; 32(1), 1-6. Available from: doi:10.6111/JKCGCT.2022.32.1.001
Woo-Yeon Kim, Tae-Wan Je, Jun-Hyuck Na, Su-Min Choi, Ha-Lin Lee, Hui-Yeon Jang, Mi-Seon Park, Yeon-Suk Jang, Yeon-Suk Jang, Jin-Ki Kang and Lee, Won Jae. "Growth of ring-shaped SiC single crystal via physical vapor transport method" Journal of the Korean Crystal Growth and Crystal Technology 32, no.1 (2022) : 1-6.doi: 10.6111/JKCGCT.2022.32.1.001
