Wet etching of α-Ga2O3 epitaxy film using a HCl-based solution (HCl 용액을 이용한 α-Ga2O3 epitaxy 박막의 습식 식각)

Choi ByoungSu (최병수); Ji Hun Um (엄지훈); Hae Ji Eom (엄해지); Dae-Woo Jeon (전대우); Sungu Hwang (황승구); Jin Kon Kim (김진곤); Young-Hoon Yun (윤영훈); Hyun Cho (조현)

doi:10.6111/JKCGCT.2022.32.1.040

Wet etching of α-Ga2O3 epitaxy film using a HCl-based solution

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2022, 32(1), pp.40~44
DOI : 10.6111/JKCGCT.2022.32.1.040
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : January 28, 2022
Accepted : February 17, 2022
Published : February 28, 2022

Choi ByoungSu ¹, Ji Hun Um ², Hae Ji Eom ¹, Dae-Woo Jeon ³, Sungu Hwang ¹, Jin Kon Kim ¹, Young-Hoon Yun ⁴, Hyun Cho ¹

¹부산대학교
²알에프에이치아이씨(주)
³한국세라믹기술원
⁴동신대학교

Accredited

ABSTRACT

Wet etching of α-Ga2O3 epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga2O3 etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75°C, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga2O3 in the 35 % HCl solution was dominated by the reactionlimited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.

KEYWORDS

α-Ga2O3 epitaxy film, Wet etching, HCl solution, Etch rate, Surface roughness

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