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@article{ART002833133},
author={Jungbok Lee and Ahn Nam Jun and Hyung Soo Ahn and Kyoung-Hwa Kim and Min Yang},
title={Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={2},
pages={45-50},
doi={10.6111/JKCGCT.2022.32.2.045}

TY - JOUR
AU - Jungbok Lee
AU - Ahn Nam Jun
AU - Hyung Soo Ahn
AU - Kyoung-Hwa Kim
AU - Min Yang
TI - Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 45
EP - 50
SN - 1225-1429
AB - Ga2O3 thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700°C. The Ga2O3 thin films grown at 500°C and 550°C were characterized as featureless flat surface. Grown at highertemperatures (600, 650, and 700°C) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700°C), the Ga2O3 films were thermally treated at 900°C for 10 minutes. Crystal structure of the Ga2O3 f ilms g rown a t 500 and 550°C were changed from amorphous to polycrystallinestructure with flat surface. Ga2O3 film grown at 550°C was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector wasmade on the low temperature grown Ga2O3 thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.
KW - Ga2O3;MOCVD;Si. Schottky Barrier Diode (SBD);MSM (metal-semiconductor-metal) photodetector
DO - 10.6111/JKCGCT.2022.32.2.045
ER -

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim and Min Yang. (2022). Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics. Journal of the Korean Crystal Growth and Crystal Technology, 32(2), 45-50.

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim and Min Yang. 2022, "Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.2 pp.45-50. Available from: doi:10.6111/JKCGCT.2022.32.2.045

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim, Min Yang "Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics" Journal of the Korean Crystal Growth and Crystal Technology 32.2 pp.45-50 (2022) : 45.

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim, Min Yang. Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics. 2022; 32(2), 45-50. Available from: doi:10.6111/JKCGCT.2022.32.2.045

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim and Min Yang. "Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics" Journal of the Korean Crystal Growth and Crystal Technology 32, no.2 (2022) : 45-50.doi: 10.6111/JKCGCT.2022.32.2.045

Jungbok Lee; Ahn Nam Jun; Hyung Soo Ahn; Kyoung-Hwa Kim; Min Yang. Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics. Journal of the Korean Crystal Growth and Crystal Technology, 32(2), 45-50. doi: 10.6111/JKCGCT.2022.32.2.045

Jungbok Lee; Ahn Nam Jun; Hyung Soo Ahn; Kyoung-Hwa Kim; Min Yang. Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(2) 45-50. doi: 10.6111/JKCGCT.2022.32.2.045

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim, Min Yang. Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics. 2022; 32(2), 45-50. Available from: doi:10.6111/JKCGCT.2022.32.2.045

Jungbok Lee, Ahn Nam Jun, Hyung Soo Ahn, Kyoung-Hwa Kim and Min Yang. "Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics" Journal of the Korean Crystal Growth and Crystal Technology 32, no.2 (2022) : 45-50.doi: 10.6111/JKCGCT.2022.32.2.045