@article{ART002869639},
author={Su-Bin Park and Tae-Wan Je and Hui-Yeon Jang and Su-Min Choi and Mi-Seon Park and Yeon-Suk Jang and Yoon-Gon Moon and Jin-Ki Kang and Lee, Won Jae},
title={Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={4},
pages={121-127},
doi={10.6111/JKCGCT.2022.32.4.121}
TY - JOUR
AU - Su-Bin Park
AU - Tae-Wan Je
AU - Hui-Yeon Jang
AU - Su-Min Choi
AU - Mi-Seon Park
AU - Yeon-Suk Jang
AU - Yoon-Gon Moon
AU - Jin-Ki Kang
AU - Lee, Won Jae
TI - Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 121
EP - 127
SN - 1225-1429
AB - β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β- Ga₂O₃ crystal, respectively. The spectra measured by Raman analysis could exhibit the crystal phase and impurity doping in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.
KW - Gallium oxide;β-Gallium oxide;Single crystal growth;EFG method
DO - 10.6111/JKCGCT.2022.32.4.121
ER -
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang and Lee, Won Jae. (2022). Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method. Journal of the Korean Crystal Growth and Crystal Technology, 32(4), 121-127.
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang and Lee, Won Jae. 2022, "Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.4 pp.121-127. Available from: doi:10.6111/JKCGCT.2022.32.4.121
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang, Lee, Won Jae "Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method" Journal of the Korean Crystal Growth and Crystal Technology 32.4 pp.121-127 (2022) : 121.
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang, Lee, Won Jae. Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method. 2022; 32(4), 121-127. Available from: doi:10.6111/JKCGCT.2022.32.4.121
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang and Lee, Won Jae. "Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method" Journal of the Korean Crystal Growth and Crystal Technology 32, no.4 (2022) : 121-127.doi: 10.6111/JKCGCT.2022.32.4.121
Su-Bin Park; Tae-Wan Je; Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Yeon-Suk Jang; Yoon-Gon Moon; Jin-Ki Kang; Lee, Won Jae. Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method. Journal of the Korean Crystal Growth and Crystal Technology, 32(4), 121-127. doi: 10.6111/JKCGCT.2022.32.4.121
Su-Bin Park; Tae-Wan Je; Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Yeon-Suk Jang; Yoon-Gon Moon; Jin-Ki Kang; Lee, Won Jae. Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(4) 121-127. doi: 10.6111/JKCGCT.2022.32.4.121
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang, Lee, Won Jae. Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method. 2022; 32(4), 121-127. Available from: doi:10.6111/JKCGCT.2022.32.4.121
Su-Bin Park, Tae-Wan Je, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Yoon-Gon Moon, Jin-Ki Kang and Lee, Won Jae. "Spatial variation in quality of Ga2O3 single crystal grown by edge-defined film-fed growth method" Journal of the Korean Crystal Growth and Crystal Technology 32, no.4 (2022) : 121-127.doi: 10.6111/JKCGCT.2022.32.4.121
