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@article{ART002890559},
author={Jooe-Hyuk Kang and Yong-Hyeon Kim and SHIN Yunji and Si-Young Bae and Yeon-Suk Jang and Lee, Won Jae and Seongmin Jeong},
title={Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={5},
pages={212-217},
doi={10.6111/JKCGCT.2022.32.5.212}

TY - JOUR
AU - Jooe-Hyuk Kang
AU - Yong-Hyeon Kim
AU - SHIN Yunji
AU - Si-Young Bae
AU - Yeon-Suk Jang
AU - Lee, Won Jae
AU - Seongmin Jeong
TI - Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 212
EP - 217
SN - 1225-1429
AB - Large thermal stress due to the difference between silicon carbide and graphite’s coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.
KW - Silicon carbide;Graphite;Single crystal growth;Interface delamination;Bonding agent
DO - 10.6111/JKCGCT.2022.32.5.212
ER -

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae and Seongmin Jeong. (2022). Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals. Journal of the Korean Crystal Growth and Crystal Technology, 32(5), 212-217.

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae and Seongmin Jeong. 2022, "Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.5 pp.212-217. Available from: doi:10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae, Seongmin Jeong "Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals" Journal of the Korean Crystal Growth and Crystal Technology 32.5 pp.212-217 (2022) : 212.

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae, Seongmin Jeong. Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals. 2022; 32(5), 212-217. Available from: doi:10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae and Seongmin Jeong. "Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals" Journal of the Korean Crystal Growth and Crystal Technology 32, no.5 (2022) : 212-217.doi: 10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang; Yong-Hyeon Kim; SHIN Yunji; Si-Young Bae; Yeon-Suk Jang; Lee, Won Jae; Seongmin Jeong. Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals. Journal of the Korean Crystal Growth and Crystal Technology, 32(5), 212-217. doi: 10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang; Yong-Hyeon Kim; SHIN Yunji; Si-Young Bae; Yeon-Suk Jang; Lee, Won Jae; Seongmin Jeong. Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(5) 212-217. doi: 10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae, Seongmin Jeong. Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals. 2022; 32(5), 212-217. Available from: doi:10.6111/JKCGCT.2022.32.5.212

Jooe-Hyuk Kang, Yong-Hyeon Kim, SHIN Yunji, Si-Young Bae, Yeon-Suk Jang, Lee, Won Jae and Seongmin Jeong. "Mechanical evaluation of SiC-graphite interface of seed crystal module for growing SiC single crystals" Journal of the Korean Crystal Growth and Crystal Technology 32, no.5 (2022) : 212-217.doi: 10.6111/JKCGCT.2022.32.5.212