Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method (혼합 소스 HVPE 방법에 의한 4H-SiC 기판 위의 육각형 Si 에피층 성장)

Kyoung Hwa Kim (김경화); Seonwoo Park (박선우); Suhyun Mun (문수현); Hyung Soo Ahn (안형수); Jae Hak Lee (이재학); Min Yang (양민); Young Tea Chun (전영태); Sam Nyung Yi (이삼녕); Lee Won Jae (이원재); Sang-Mo Koo (구상모); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2023.33.2.045

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2023, 33(2), pp.45~53
DOI : 10.6111/JKCGCT.2023.33.2.045
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : March 15, 2023
Accepted : March 29, 2023
Published : April 30, 2023

Kyoung Hwa Kim ¹, Seonwoo Park ², Suhyun Mun ², Hyung Soo Ahn ², Jae Hak Lee ², Min Yang ², Young Tea Chun ², Sam Nyung Yi ², Lee Won Jae ³, Sang-Mo Koo ⁴, Kim Suck Whan ⁵

¹한국해양대학교 화합물반도체공정교육센터
²한국해양대학교
³동의대학교
⁴광운대학교
⁵안동대학교

Accredited

ABSTRACT

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixedsource hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

KEYWORDS

Hexagonal Si, Cubic Si, SiC, Mixed-source HVPE, Raman shift

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

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