Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method (혼합 소스 HVPE 방법에 의한 4H-SiC 기판 위의 육각형 Si 에피층 성장)

Kyoung Hwa Kim (김경화); Seonwoo Park (박선우); Suhyun Mun (문수현); Hyung Soo Ahn (안형수); Jae Hak Lee (이재학); Min Yang (양민); Young Tea Chun (전영태); Sam Nyung Yi (이삼녕); Lee Won Jae (이원재); Sang-Mo Koo (구상모); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2023.33.2.045

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2023, 33(2), pp.45~53
DOI : 10.6111/JKCGCT.2023.33.2.045
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : March 15, 2023
Accepted : March 29, 2023
Published : April 30, 2023

Kyoung Hwa Kim ¹, Seonwoo Park ², Suhyun Mun ², Hyung Soo Ahn ², Jae Hak Lee ², Min Yang ², Young Tea Chun ², Sam Nyung Yi ², Lee Won Jae ³, Sang-Mo Koo ⁴, Kim Suck Whan ⁵

¹한국해양대학교 화합물반도체공정교육센터
²한국해양대학교
³동의대학교
⁴광운대학교
⁵안동대학교

Accredited

ABSTRACT

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixedsource hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

KEYWORDS

Hexagonal Si, Cubic Si, SiC, Mixed-source HVPE, Raman shift

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[journal] J. Millan / 2014 / A survey of wide bandgap power semiconductor devices / IEEE Trans. Power Electron 29 : 2155~

[journal] X. She / 2017 / Review of silicon carbide power devices and their applications / IEEE Trans. Ind. Electron 64 : 8193~

[journal] K. Tachiki / 2021 / Mobility improvement of 4H-SiC(0001)MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation / Appl. Phys. Express 14(3) : 03100~

[journal] T. Kobayashi / 2020 / Design and formation of SiC(0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation / Appl. Phys. Express 13 : 091003~

[journal] J. P. Henning / 1998 / Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions / J. Electron. Mater 27 : 296~

[journal] S. Nishida / 2015 / Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si / Jpn. J. Appl. Phys 54 : 030210~

[journal] N. Shigekawa / 2018 / Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces / Jpn. J. Appl. Phys 57 : 02BE04~

[journal] L. Li / 2012 / Electrical and photoelectric properties of p-Si/n+-6H-SiC heterojunction non-ultraviolet photodiode / Electron. Lett 48 : 1227~

[journal] F. Triendl / 2021 / Si/4H-SiC heterostructure formation using metal-induced crystallization / Mater. Sci. Semi-cond. Process 128 : 105763~

[journal] A. Perez-Tomas / 2007 / Characterization and modeling of n-n Si/Si C heterojunction diodes / J. Appl. Phys 102 : 014505~

[journal] C. Yang / 2012 / The epitaxial growth of(111)oriented monocrystalline Si film based on a 4 : 5 Si-to-SiC atomic lattice matching interface / Mater. Res. Bull 47 : 1331~

[journal] L. Xie / 2012 / Preferential growth of Si films on 6H-SiC(0001)C-face / Appl. Surf. Sci 261 : 88~

[journal] S. Fan / 2014 / First-principles study on Si(-220)/6H-SiC(0001)interface / Solid State Commun 177 : 20~

[journal] Jr, R.H. Wentorf / 1963 / Two new forms of silicon / Science 139 : 338~

[journal] B. R. Wu / 2000 / First-principles study on the high-pressure behavior of the zone-center modes of lonsdaleite silicon / Phys. Rev. B 61 : 5~

[journal] S. Q. Wang / 2003 / First-principles study on the lonsdaleite phases of C, Si and Ge / J. Phys.: Condens. Matter 15 : L197~

[journal] A. Fissel / 2006 / Formation of twinning-superlattice regions by artificial stacking of Si layers / J. Cryst. Growth 290 : 392~

[journal] H. I. T. Hauge / 2015 / Hexagonal silicon realized / Nano Lett 15(9) : 5855~

[journal] F. Fabbri / 2014 / Visible and infra-red light emission in Boron-doped wurtzite silicon nanowires / Sci. Rep 49 : 3603~

[journal] M. Amato / 2016 / Crystal phase effects in Si nanowire polytypes and their homojunctions / Nano Lett 16 : 5694~

[journal] T. -H. Cheng / 2014 / Phonon-assisted transient electroluminescence in Si / Appl. Phys. Lett 104 : 261102~

[journal] K. P. Homewood / 2005 / Light from Si via dislocation loops / Materials Today 8 : 34~

[journal] J. J. Wierer Jr / 2009 / III-nitride photonic-crystal light-emitting diodes with high extraction efficiency / Nature Photon 3 : 163~

[journal] P. R. Tavernier / 2000 / Two-step growth of high-quality GaN by hydride vapor-phase epitaxy / Appl. Phys. Lett 77 : 1804~

[journal] T. Paskova / 2000 / Influence of growth rate on the structure of thick GaN layers grown by HVPE / J. Crystal Growth 208 : 18~

[journal] H. S. Ahn / 2005 / Characterization of AlGaN layer with high Al content grown by mixed-source HVPE / Phys. Stat. Sol. (a) 202 : 1048~

[journal] 김경화 / 2020 / Characterization of Epilayers in Vertical Light-Emitting Diode Grown by Mixed-Source Hydride Vapor Phase Epitaxy / 새물리 / 한국물리학회 70(4) : 315~321

[journal] Z. He / 2019 / Direct evidence of 2H hexagonal Si in Si nanowires / Nanoscale 11 : 4846~

[journal] H. Olijnyk / 1984 / Structural phase transitions in Si and Ge under pressures up to 50 GPa / Phys. Lett. A 103 : 137~

[journal] C. C. Yang / 2004 / Temperature-pressure phase diagram of silicon determined by Clapeyron equation / Solid State Comm 129 : 437~

[journal] F. J. Lopez / 2011 / Silicon nanowire polytypes : Identification by Raman spectroscopy, generation mechanism, and misfit strain in homostructures / ACS Nano 5(11) : 8958~

[journal] C. Raffy / 2002 / Properties of hexagonal polytypes of group-IV elements from first principles calculations / Phys. Rev. B 66 : 075201~

[journal] J. Crain / 1994 / Reversible pressure-induced structural transitions between metastable phases of silicon / Phys. Rev. B 50 : 13043~

[journal] G. Lucazeau / 1997 / Micro-Raman analysis of residual stresses and phase transformations in crystalline silicon under microindentation / J. Mater. Res 12 : 2262~

[journal] S. Piscanec / 2003 / Raman spectroscopy of silicon nanowires / Phys. Rev. B 68 : 241312~

[journal] Y. X. Zhang / 2006 / Raman microspectroscopy study on the ground surface of monocrystalline silicon wafers / Key Eng. Mater 304-305 : 241~

[journal] H. Jian / 2015 / Growth and morphology modulation of needle-like silicon nanowires for SERS application / Rare Metal Mater. Eng 44(11) : 2692~

[journal] C. Fasolato / 2018 / Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy / Nano Lett 18 : 7075~

[journal] S. Nakashima / 1997 / Raman in vestigation of SiC polytypes / Phys. Stat. Sol. (a) 162 : 39~

[journal] A. A. Lebedev / 2019 / Radiation Defects in Hetero-structures 3C-SiC/4H-SiC / Crystals 9 : 115~

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method

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