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@article{ART002955272},
author={Tae-Wan Je and Su-Bin Park and Hui-Yeon Jang and Su-Min Choi and Mi-Seon Park and Yeon-Suk Jang and Won-Jae Lee and Yoon-Gon Moon and Jin-Ki Kang and Yun-Ji Shin and Si-Young Bae},
title={Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2023},
volume={33},
number={2},
pages={83-90},
doi={10.6111/JKCGCT.2023.33.2.083}

TY - JOUR
AU - Tae-Wan Je
AU - Su-Bin Park
AU - Hui-Yeon Jang
AU - Su-Min Choi
AU - Mi-Seon Park
AU - Yeon-Suk Jang
AU - Won-Jae Lee
AU - Yoon-Gon Moon
AU - Jin-Ki Kang
AU - Yun-Ji Shin
AU - Si-Young Bae
TI - Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2023
VL - 33
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 83
EP - 90
SN - 1225-1429
AB - The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.
KW - Gallium oxide;β-Ga2O3;EFG method;Single crystal growth;Sn;Doping
DO - 10.6111/JKCGCT.2023.33.2.083
ER -

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin and Si-Young Bae. (2023). Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method. Journal of the Korean Crystal Growth and Crystal Technology, 33(2), 83-90.

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin and Si-Young Bae. 2023, "Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method", Journal of the Korean Crystal Growth and Crystal Technology, vol.33, no.2 pp.83-90. Available from: doi:10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin, Si-Young Bae "Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method" Journal of the Korean Crystal Growth and Crystal Technology 33.2 pp.83-90 (2023) : 83.

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin, Si-Young Bae. Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method. 2023; 33(2), 83-90. Available from: doi:10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin and Si-Young Bae. "Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method" Journal of the Korean Crystal Growth and Crystal Technology 33, no.2 (2023) : 83-90.doi: 10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je; Su-Bin Park; Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Yeon-Suk Jang; Won-Jae Lee; Yoon-Gon Moon; Jin-Ki Kang; Yun-Ji Shin; Si-Young Bae. Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method. Journal of the Korean Crystal Growth and Crystal Technology, 33(2), 83-90. doi: 10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je; Su-Bin Park; Hui-Yeon Jang; Su-Min Choi; Mi-Seon Park; Yeon-Suk Jang; Won-Jae Lee; Yoon-Gon Moon; Jin-Ki Kang; Yun-Ji Shin; Si-Young Bae. Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method. Journal of the Korean Crystal Growth and Crystal Technology. 2023; 33(2) 83-90. doi: 10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin, Si-Young Bae. Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method. 2023; 33(2), 83-90. Available from: doi:10.6111/JKCGCT.2023.33.2.083

Tae-Wan Je, Su-Bin Park, Hui-Yeon Jang, Su-Min Choi, Mi-Seon Park, Yeon-Suk Jang, Won-Jae Lee, Yoon-Gon Moon, Jin-Ki Kang, Yun-Ji Shin and Si-Young Bae. "Characteristics of Sn-doped β-Ga₂O₃single crystals grown by EFG method" Journal of the Korean Crystal Growth and Crystal Technology 33, no.2 (2023) : 83-90.doi: 10.6111/JKCGCT.2023.33.2.083