Formation of amorphous Ga2O3 thin films on Ti metal substrates by MOCVD and characteristics of diodes (MOCVD에 의한 Ti 금속 기판 위의 비정질 Ga₂O₃ 박막 형성과 다이오드 특성)

Ahn Nam Jun (안남준); Jang Beom An (안장범); Hyung Soo Ahn (안형수); Kyoung Hwa Kim (김경화); Min Yang (양민)

doi:10.6111/JKCGCT.2023.33.4.125

Formation of amorphous Ga2O3 thin films on Ti metal substrates by MOCVD and characteristics of diodes

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2023, 33(4), pp.125~131
DOI : 10.6111/JKCGCT.2023.33.4.125
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : June 23, 2023
Accepted : July 20, 2023
Published : August 31, 2023

Ahn Nam Jun ¹, Jang Beom An ¹, Hyung Soo Ahn ¹, Kyoung Hwa Kim ², Min Yang ¹

¹한국해양대학교
²한국해양대학교 화합물반도체공정교육센터

Accredited

ABSTRACT

Ga₂O₃ thin films were deposited on Ti substrates using metal organic chemical vapor deposition (MOCVD) at temperatures ranging from 350 to 500°C. Lower deposition temperatures were chosen to minimize thermal deformation of the Ti substrate and its impact on the Ga₂O₃ film. Film surfaces tended to become rough at temperatures below 500°C due to three-dimensional growth, but the film formed at 500°C had the most uniform surface. All deposited films were amorphous in structure. Vertical Schottky diodes were fabricated and I-V and C-V measurements were performed. I-V measurements showed higher operating voltages compared to a typical SBD for films grown at different temperatures. The sample grown at 500°C, which had the most uniform surface, exhibited the lowest operating voltage. Higher growthtemperatures resulted in higher capacitance values according to C-V measurements

KEYWORDS

MOCVD, Ga₂O₃, Amorphous, Metal substrate

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