Effect of AlF₃ addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method (플라즈마 -스프레이법에 의해 코팅한 옥시불화이트륨 (YOF) 증착층의 플라즈마 내식성에 미치는 불화알루미늄 (AlF₃) 첨가 효과)

Young-Ju Kim (김영주); Je Hong Park (박제홍); Si beom Yu (유시범); Seungwon Jeong (정승원); Kangmin Kim (김강민); Jeong-ho Ryu (류정호)

doi:10.6111/JKCGCT.2023.33.4.153

Effect of AlF₃ addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2023, 33(4), pp.153-157
DOI : 10.6111/JKCGCT.2023.33.4.153
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : August 3, 2023
Accepted : August 17, 2023
Published : August 31, 2023

Young-Ju Kim ¹, Je Hong Park ², Si beom Yu ², Seungwon Jeong ², Kangmin Kim ³, Jeong-ho Ryu ²

¹(주)대찬테크 기술연구소
²한국교통대학교
³한국생산기술연구원

Accredited

ABSTRACT

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF₃ powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF₃ with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF₃ mixing ratio was analyzed.

KEYWORDS

YOF, AlF₃, Plasma-spray coating, Plasma-etching ratio

Citation status

* References for papers published after 2023 are currently being built.

[journal] S. Qin / 2007 / Wafer dependence of Johnsen-Rahbek type electrostatic chuck for semiconductor processes / J. Appl. Phys 102 : 064901~

[journal] T. Watanabe / 1992 / Effect of additives on the electrostatic force of alumina electrostatic chucks / J. Ceramic Soc. Jpn 100 : 1~

[journal] G. A. Wardly / 1973 / Electrostatic wafer chuck for electron beam microfabrication / Rev. Sci. Instrum 44 : 1506~

[journal] 임택규 / 2010 / Experimental study on nanofludic heat pipe hot chuck plate in semiconductor wafer baking process / Journal of Mechanical Science and Technology / 대한기계학회 24(7) : 1501~1509

[journal] J. Li / 2020 / Design and regularity research of MOCVD heating plate based on experiments and simulations / Vacuum 174 : 109174~

[journal] 오혁근 / 2009 / Optimization of rapid thermal processing for uniform temperature distribution on wafer surface / Journal of Mechanical Science and Technology / 대한기계학회 23(6) : 1544~1552

[journal] T. Watanabe / 1993 / Relationship between electrical resistivity and electrostatic force of alumina electrostatic chuck / Jpn. J. Appl. Phys 32 : 864~

[journal] L. Pei / 2013 / Preparation and optical properties of sputtered-deposition yttrium fluoride film / Nucl. Instrum. Methods Phys. Res. Sect. B 307 : 429~

[journal] D. -M. Kim / 2011 / The erosion behaviors of Y2O3 and YF3 coatings under fluorocarbon plasma / Thin Solid Film 519 : 6698~

[journal] S. Lee / 2020 / Plasma etching behavior of YOF caoting deposited by suspension plasma spraying in induced coupled CHF3/Ar plasma / Coatings 10 : 1023~

[journal] 이정일 / 2021 / Solid-state synthesis of yttrium oxyfluoride powders and their application to plasma spray coating / 한국결정성장학회지 / 한국결정성장학회 31(6) : 276~281

[journal] K. Miyashita / 2019 / Fluorin and oxygen plasma exposure behavior of yttrium oxyfluoride ceramics / Jpn. J. Appl. Phys 58 : SEEC01~

[journal] T. Ma / 2018 / Comparisions of NF3 plasma-cleaned Y2O3, YOF, and YF3 chamber coat-ngs during silicon etching in Cl2 plasmas / J. Vac. Sci. Technol. A 36 : 031305~

[journal] A. Mukherjee / 2011 / Studies on fluorination of Y2O3 by NH4HF2 / Thermochim. Acta 520 : 145~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of AlF₃ addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of AlF₃ addition to the plasma resistance behavior of YOF coating deposited by plasma-spraying method

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (0)

REFERENCES (14) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.