@article{ART003075637},
author={Jun-Hyuck Na and Min-Gyu Kang and Gi-Uk Lee and Ye-Jin Choi and Mi-Seon Park and Gwang-Hee Jung and Gyu-Do Lee and Woo-Yeon Kim and Lee, Won Jae},
title={The effect of PVT process parameters on the resistance of HPSI-SiC crystal},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={2},
pages={41-47},
doi={10.6111/JKCGCT.2024.34.2.041}
TY - JOUR
AU - Jun-Hyuck Na
AU - Min-Gyu Kang
AU - Gi-Uk Lee
AU - Ye-Jin Choi
AU - Mi-Seon Park
AU - Gwang-Hee Jung
AU - Gyu-Do Lee
AU - Woo-Yeon Kim
AU - Lee, Won Jae
TI - The effect of PVT process parameters on the resistance of HPSI-SiC crystal
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 41
EP - 47
SN - 1225-1429
AB - In this study, the resistance characteristics of semi-insulating SiC single crystals grown using the PVT method were investigated, considering the purity level of SiC source powders used in PVT growth and the cooling procedure after crystal growth. Two β-SiC powders with different purities were employed, and the cooling rate after growth was adjusted to achieve various resistance values. 4-inch HPSI-SiC ingots were grown using the PVT method, utilizing SiC powderswith low nitrogen concentration and relatively high nitrogen concentration. These ingots were then subjected to different cooling procedures to modify the cooling rate. Transmission/absorption spectra and crystal quality of the grown crystals were analyzed through UV/VIs/NIR spectroscopy and X-ray rocking curve analysis, respectively. Additionally, electrical properties were investigated through non-contact resistivity analysis to identify the dominant factors influencing resistivity properties.
KW - HPSI-SiC;Intrinsic point defects;Resistivity;PVT
DO - 10.6111/JKCGCT.2024.34.2.041
ER -
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim and Lee, Won Jae. (2024). The effect of PVT process parameters on the resistance of HPSI-SiC crystal. Journal of the Korean Crystal Growth and Crystal Technology, 34(2), 41-47.
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim and Lee, Won Jae. 2024, "The effect of PVT process parameters on the resistance of HPSI-SiC crystal", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.2 pp.41-47. Available from: doi:10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim, Lee, Won Jae "The effect of PVT process parameters on the resistance of HPSI-SiC crystal" Journal of the Korean Crystal Growth and Crystal Technology 34.2 pp.41-47 (2024) : 41.
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim, Lee, Won Jae. The effect of PVT process parameters on the resistance of HPSI-SiC crystal. 2024; 34(2), 41-47. Available from: doi:10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim and Lee, Won Jae. "The effect of PVT process parameters on the resistance of HPSI-SiC crystal" Journal of the Korean Crystal Growth and Crystal Technology 34, no.2 (2024) : 41-47.doi: 10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na; Min-Gyu Kang; Gi-Uk Lee; Ye-Jin Choi; Mi-Seon Park; Gwang-Hee Jung; Gyu-Do Lee; Woo-Yeon Kim; Lee, Won Jae. The effect of PVT process parameters on the resistance of HPSI-SiC crystal. Journal of the Korean Crystal Growth and Crystal Technology, 34(2), 41-47. doi: 10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na; Min-Gyu Kang; Gi-Uk Lee; Ye-Jin Choi; Mi-Seon Park; Gwang-Hee Jung; Gyu-Do Lee; Woo-Yeon Kim; Lee, Won Jae. The effect of PVT process parameters on the resistance of HPSI-SiC crystal. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(2) 41-47. doi: 10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim, Lee, Won Jae. The effect of PVT process parameters on the resistance of HPSI-SiC crystal. 2024; 34(2), 41-47. Available from: doi:10.6111/JKCGCT.2024.34.2.041
Jun-Hyuck Na, Min-Gyu Kang, Gi-Uk Lee, Ye-Jin Choi, Mi-Seon Park, Gwang-Hee Jung, Gyu-Do Lee, Woo-Yeon Kim and Lee, Won Jae. "The effect of PVT process parameters on the resistance of HPSI-SiC crystal" Journal of the Korean Crystal Growth and Crystal Technology 34, no.2 (2024) : 41-47.doi: 10.6111/JKCGCT.2024.34.2.041
