@article{ART003075640},
author={Gyong-Phil Yin and Kang, Seung-Min},
title={A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={2},
pages={61-65},
doi={10.6111/JKCGCT.2024.34.2.061}
TY - JOUR
AU - Gyong-Phil Yin
AU - Kang, Seung-Min
TI - A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 61
EP - 65
SN - 1225-1429
AB - HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.
KW - HVPE;AlN;Single crystal;Growth;Behavior
DO - 10.6111/JKCGCT.2024.34.2.061
ER -
Gyong-Phil Yin and Kang, Seung-Min. (2024). A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess. Journal of the Korean Crystal Growth and Crystal Technology, 34(2), 61-65.
Gyong-Phil Yin and Kang, Seung-Min. 2024, "A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.2 pp.61-65. Available from: doi:10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin, Kang, Seung-Min "A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess" Journal of the Korean Crystal Growth and Crystal Technology 34.2 pp.61-65 (2024) : 61.
Gyong-Phil Yin, Kang, Seung-Min. A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess. 2024; 34(2), 61-65. Available from: doi:10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin and Kang, Seung-Min. "A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess" Journal of the Korean Crystal Growth and Crystal Technology 34, no.2 (2024) : 61-65.doi: 10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin; Kang, Seung-Min. A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess. Journal of the Korean Crystal Growth and Crystal Technology, 34(2), 61-65. doi: 10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin; Kang, Seung-Min. A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(2) 61-65. doi: 10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin, Kang, Seung-Min. A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess. 2024; 34(2), 61-65. Available from: doi:10.6111/JKCGCT.2024.34.2.061
Gyong-Phil Yin and Kang, Seung-Min. "A study on the growth behavior of AlN single crystal according to the change of N₂ in HVPE propcess" Journal of the Korean Crystal Growth and Crystal Technology 34, no.2 (2024) : 61-65.doi: 10.6111/JKCGCT.2024.34.2.061
