@article{ART003152915},
author={Choi ByoungSu and Sungu Hwang and Jin-Kon Kim and Cho, Hyun},
title={Cl2/Ar inductively coupled plasma etching of V2O5 thin film},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={6},
pages={245-249},
doi={10.6111/JKCGCT.2024.34.6.245}
TY - JOUR
AU - Choi ByoungSu
AU - Sungu Hwang
AU - Jin-Kon Kim
AU - Cho, Hyun
TI - Cl2/Ar inductively coupled plasma etching of V2O5 thin film
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 245
EP - 249
SN - 1225-1429
AB - V2O5 thin films were etched using Cl2/Ar inductively coupled plasmas, and the effects of plasma composition, ICP source power, rf chuck power, and process pressure on the etch rate of V2O5 thin films were investigated. As the Cl2 gas content in the Cl2/Ar gas mixtures increased, the etch rate of V2O5 thin films generally increased and the etch rate as high as ~82.7 nm/min was obtained at the 66.7 Vol% condition. When the ICP source power increased, the etch rate initially increased up to 500 W, but then decreased at higher power conditions due to the decrease in the removal efficiency of the VClx etch products. The V2O5 etch rate continuously increased with increasing rf chuck power and process pressure, and a maximum etch rate of ~112.4 nm/min was obtained at 20Cl2/10Ar, 500 W ICP source power, 250 W rf chuck power, and 5 mTorr condition.
KW - V2O5 thin film;Cl2/Ar;Inductively coupled plasma;Etch rate;Surface roughness
DO - 10.6111/JKCGCT.2024.34.6.245
ER -
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim and Cho, Hyun. (2024). Cl2/Ar inductively coupled plasma etching of V2O5 thin film. Journal of the Korean Crystal Growth and Crystal Technology, 34(6), 245-249.
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim and Cho, Hyun. 2024, "Cl2/Ar inductively coupled plasma etching of V2O5 thin film", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.6 pp.245-249. Available from: doi:10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim, Cho, Hyun "Cl2/Ar inductively coupled plasma etching of V2O5 thin film" Journal of the Korean Crystal Growth and Crystal Technology 34.6 pp.245-249 (2024) : 245.
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim, Cho, Hyun. Cl2/Ar inductively coupled plasma etching of V2O5 thin film. 2024; 34(6), 245-249. Available from: doi:10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim and Cho, Hyun. "Cl2/Ar inductively coupled plasma etching of V2O5 thin film" Journal of the Korean Crystal Growth and Crystal Technology 34, no.6 (2024) : 245-249.doi: 10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu; Sungu Hwang; Jin-Kon Kim; Cho, Hyun. Cl2/Ar inductively coupled plasma etching of V2O5 thin film. Journal of the Korean Crystal Growth and Crystal Technology, 34(6), 245-249. doi: 10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu; Sungu Hwang; Jin-Kon Kim; Cho, Hyun. Cl2/Ar inductively coupled plasma etching of V2O5 thin film. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(6) 245-249. doi: 10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim, Cho, Hyun. Cl2/Ar inductively coupled plasma etching of V2O5 thin film. 2024; 34(6), 245-249. Available from: doi:10.6111/JKCGCT.2024.34.6.245
Choi ByoungSu, Sungu Hwang, Jin-Kon Kim and Cho, Hyun. "Cl2/Ar inductively coupled plasma etching of V2O5 thin film" Journal of the Korean Crystal Growth and Crystal Technology 34, no.6 (2024) : 245-249.doi: 10.6111/JKCGCT.2024.34.6.245
