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Cl2/Ar inductively coupled plasma etching of V2O5 thin film

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2024, 34(6), pp.245-249
  • DOI : 10.6111/JKCGCT.2024.34.6.245
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : December 2, 2024
  • Accepted : December 12, 2024
  • Published : December 31, 2024

Choi ByoungSu 1 Sungu Hwang 2 Jin-Kon Kim 2 Cho, Hyun 2

1부산대학교 나노융합기술학과
2부산대학교

Accredited

ABSTRACT

V2O5 thin films were etched using Cl2/Ar inductively coupled plasmas, and the effects of plasma composition, ICP source power, rf chuck power, and process pressure on the etch rate of V2O5 thin films were investigated. As the Cl2 gas content in the Cl2/Ar gas mixtures increased, the etch rate of V2O5 thin films generally increased and the etch rate as high as ~82.7 nm/min was obtained at the 66.7 Vol% condition. When the ICP source power increased, the etch rate initially increased up to 500 W, but then decreased at higher power conditions due to the decrease in the removal efficiency of the VClx etch products. The V2O5 etch rate continuously increased with increasing rf chuck power and process pressure, and a maximum etch rate of ~112.4 nm/min was obtained at 20Cl2/10Ar, 500 W ICP source power, 250 W rf chuck power, and 5 mTorr condition.

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