Evaluation of plasma resistance properties of LaF3 films deposited by the RF-IBAD method (RF-IBAD 방식으로 증착된 LaF3 필름의 내플라즈마 특성 평가)

Jihun  Jung (정지훈); Sung  Hyun  Woo (우성현); Sehyun Oh (오세현); Hee  Young  Kang (강희영); JUNG HEON LEE (이정헌); Kim Hyeong Jun (김형준)

doi:10.6111/JKCGCT.2025.35.1.030

Evaluation of plasma resistance properties of LaF3 films deposited by the RF-IBAD method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2025, 35(1), pp.30~35
DOI : 10.6111/JKCGCT.2025.35.1.030
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : March 24, 2025
Accepted : March 24, 2025
Published : March 31, 2025

Jihun Jung ¹, Sung Hyun Woo ¹, Sehyun Oh ¹, Hee Young Kang ², JUNG HEON LEE ³, Kim Hyeong Jun ¹

¹한국세라믹기술원
²그린광학
³성균관대학교

Accredited

ABSTRACT

In this study, the plasma resistance of LaF₃ films deposited on glass was evaluated using the Radio Frequency –Ion Beam Assisted Deposition (RF-IBAD) method. Based on the CF₄ + Ar plasma etching rate, the LaF₃ film showedexcellent plasma resistance, which was about 10 times lower than that of quartz glass and about 2 times lower than that of alumina. This is interpreted as being due to the fact that the LaF₃ film effectively suppresses the reaction with the CF₄ plasma and has low volatility due to its high melting point (2,327ºC). Therefore, the LaF₃ film has better plasma resistance than conventional quartz glass and ceramics, and is likely to be used as an etching protection material for semiconductor process components.

KEYWORDS

RF-IBAD deposition, LaF₃ film, Plasma-resistant materials, Plasma dry etching, Etching rate, Roughness

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Evaluation of plasma resistance properties of LaF3 films deposited by the RF-IBAD method

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Evaluation of plasma resistance properties of LaF3 films deposited by the RF-IBAD method

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