@article{ART003187583},
author={Jihun Jung and Sung Hyun Woo and Sehyun Oh and Hee Young Kang and JUNG HEON LEE and Kim Hyeong Jun},
title={Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2025},
volume={35},
number={1},
pages={30-35},
doi={10.6111/JKCGCT.2025.35.1.030}
TY - JOUR
AU - Jihun Jung
AU - Sung Hyun Woo
AU - Sehyun Oh
AU - Hee Young Kang
AU - JUNG HEON LEE
AU - Kim Hyeong Jun
TI - Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2025
VL - 35
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 30
EP - 35
SN - 1225-1429
AB - In this study, the plasma resistance of LaF₃ films deposited on glass was evaluated using the Radio Frequency –Ion Beam Assisted Deposition (RF-IBAD) method. Based on the CF₄ + Ar plasma etching rate, the LaF₃ film showedexcellent plasma resistance, which was about 10 times lower than that of quartz glass and about 2 times lower than that of alumina. This is interpreted as being due to the fact that the LaF₃ film effectively suppresses the reaction with the CF₄ plasma and has low volatility due to its high melting point (2,327ºC). Therefore, the LaF₃ film has better plasma resistance than conventional quartz glass and ceramics, and is likely to be used as an etching protection material for semiconductor process components.
KW - RF-IBAD deposition;LaF₃ film;Plasma-resistant materials;Plasma dry etching;Etching rate;Roughness
DO - 10.6111/JKCGCT.2025.35.1.030
ER -
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE and Kim Hyeong Jun. (2025). Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method. Journal of the Korean Crystal Growth and Crystal Technology, 35(1), 30-35.
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE and Kim Hyeong Jun. 2025, "Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method", Journal of the Korean Crystal Growth and Crystal Technology, vol.35, no.1 pp.30-35. Available from: doi:10.6111/JKCGCT.2025.35.1.030
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE, Kim Hyeong Jun "Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method" Journal of the Korean Crystal Growth and Crystal Technology 35.1 pp.30-35 (2025) : 30.
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE, Kim Hyeong Jun. Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method. 2025; 35(1), 30-35. Available from: doi:10.6111/JKCGCT.2025.35.1.030
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE and Kim Hyeong Jun. "Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method" Journal of the Korean Crystal Growth and Crystal Technology 35, no.1 (2025) : 30-35.doi: 10.6111/JKCGCT.2025.35.1.030
Jihun Jung; Sung Hyun Woo; Sehyun Oh; Hee Young Kang; JUNG HEON LEE; Kim Hyeong Jun. Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method. Journal of the Korean Crystal Growth and Crystal Technology, 35(1), 30-35. doi: 10.6111/JKCGCT.2025.35.1.030
Jihun Jung; Sung Hyun Woo; Sehyun Oh; Hee Young Kang; JUNG HEON LEE; Kim Hyeong Jun. Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method. Journal of the Korean Crystal Growth and Crystal Technology. 2025; 35(1) 30-35. doi: 10.6111/JKCGCT.2025.35.1.030
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE, Kim Hyeong Jun. Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method. 2025; 35(1), 30-35. Available from: doi:10.6111/JKCGCT.2025.35.1.030
Jihun Jung, Sung Hyun Woo, Sehyun Oh, Hee Young Kang, JUNG HEON LEE and Kim Hyeong Jun. "Evaluation of plasma resistance properties of LaF₃ films deposited by the RF-IBAD method" Journal of the Korean Crystal Growth and Crystal Technology 35, no.1 (2025) : 30-35.doi: 10.6111/JKCGCT.2025.35.1.030
