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Optical isotropic properties of 2 inch n-InP single crystals

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2025, 35(4), pp.160~164
  • DOI : 10.6111/JKCGCT.2025.35.4.160
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : September 18, 2025
  • Accepted : October 27, 2025
  • Published : December 31, 2025

SEOK JOO SEON 1 Hakjun Lim 2 Jong Rak Park 2 JunHo Lee 3 Ju, Heongkyu 1

1가천대학교
2(주)미코 하이테크
3한국전자기술연구원

Accredited

ABSTRACT

We investigated optical anisotropy and homogeneity of a n-doped InP single crystal wafer grown by Vertical Bridgeman method. As circularly polarized light at 1,060 nm wavelength was incident to the wafer surface, output light polarization was analyzed to see optical birefringence-induced change in polarization. We also scanned the position on the wafer to which light was incident to see position-dependent optical anisotropy of the wafer, i.e, inhomogeneity. The change of polarization was seen to be correlated to some extent with etch pit density of the wafer. The polarization-based optical analysis can also be applied to other kinds of single crystal wafers which have crystallographic symmetries for the shake of straightforward examination of crystal defects such as dislocations as a function of wafer position and homogeneity of optical anisotropy.

Citation status

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This paper was written with support from the National Research Foundation of Korea.