@article{ART003317748},
author={Gyeong-Jun Song and Ha-Jun Kim and Na-Kyeong Kim and Chan-Ho Park and Mi-Seon Park and Kwang-Hee Jung and Jung-Gon Kim and Lee, Won Jae},
title={Exploration of SiC single crystal growth by a resistive-heating-based PVT method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2026},
volume={36},
number={1},
pages={1-5},
doi={10.6111/JKCGCT.2026.36.1.001}
TY - JOUR
AU - Gyeong-Jun Song
AU - Ha-Jun Kim
AU - Na-Kyeong Kim
AU - Chan-Ho Park
AU - Mi-Seon Park
AU - Kwang-Hee Jung
AU - Jung-Gon Kim
AU - Lee, Won Jae
TI - Exploration of SiC single crystal growth by a resistive-heating-based PVT method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2026
VL - 36
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 5
SN - 1225-1429
AB - Currently, the only established method for stable SiC single-crystal growth is the physical vapor transport (PVT) technique. However, conventional PVT systems often require optimizing the hot-zone and insulation layouts to compensate for thermal non-uniformities inherent in large-diameter crystal growth. To address these limitations, a resistive-heating-based PVT approach has been proposed, enabling more precise and uniform thermal-field control through flexible internal heater design. In this study, a resistive-heating-type PVT furnace was newly constructed, and 4-inch SiC single crystals were grown by optimizing the hot-zone and insulation configurations. The grown crystals exhibited a slightly convex shape and achieved an average growth rate of 116 µm/hr. Ultraviolet fluorescence (UVF) imaging revealed that 4H-SiC crystals containing locally distributed 6H-SiC polytype regions were obtained. High-resolution X-ray diffraction (HR-XRD) measurements showed full width at half maximum (FWHM) values ranging from 71.1 arcsec to 115.9 arcsec. Raman spectroscopy confirmed consistent crystal quality, with the FTO (2/4) phonon mode exhibiting a FWHM of 5.5 cm-1 to 5.9 cm-1. Except for areas with 6H- SiC polytypes, the dominant 4H-SiC regions exhibited nearly stress-free characteristics with the FTO (2/4) peak close to 776 cm-1 of typical of free-standing 4H-SiC. These results demonstrate that resistive-heating-based PVT method can yield high-crystallinity, low-stress SiC single crystals, provided that polytype stability is maintained during growth.
KW - SiC;Resistive heating;Polytype;UVF;X-ray diffraction;Raman scattering
DO - 10.6111/JKCGCT.2026.36.1.001
ER -
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. (2026). Exploration of SiC single crystal growth by a resistive-heating-based PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 36(1), 1-5.
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. 2026, "Exploration of SiC single crystal growth by a resistive-heating-based PVT method", Journal of the Korean Crystal Growth and Crystal Technology, vol.36, no.1 pp.1-5. Available from: doi:10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae "Exploration of SiC single crystal growth by a resistive-heating-based PVT method" Journal of the Korean Crystal Growth and Crystal Technology 36.1 pp.1-5 (2026) : 1.
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Exploration of SiC single crystal growth by a resistive-heating-based PVT method. 2026; 36(1), 1-5. Available from: doi:10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Exploration of SiC single crystal growth by a resistive-heating-based PVT method" Journal of the Korean Crystal Growth and Crystal Technology 36, no.1 (2026) : 1-5.doi: 10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song; Ha-Jun Kim; Na-Kyeong Kim; Chan-Ho Park; Mi-Seon Park; Kwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Exploration of SiC single crystal growth by a resistive-heating-based PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 36(1), 1-5. doi: 10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song; Ha-Jun Kim; Na-Kyeong Kim; Chan-Ho Park; Mi-Seon Park; Kwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Exploration of SiC single crystal growth by a resistive-heating-based PVT method. Journal of the Korean Crystal Growth and Crystal Technology. 2026; 36(1) 1-5. doi: 10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Exploration of SiC single crystal growth by a resistive-heating-based PVT method. 2026; 36(1), 1-5. Available from: doi:10.6111/JKCGCT.2026.36.1.001
Gyeong-Jun Song, Ha-Jun Kim, Na-Kyeong Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Exploration of SiC single crystal growth by a resistive-heating-based PVT method" Journal of the Korean Crystal Growth and Crystal Technology 36, no.1 (2026) : 1-5.doi: 10.6111/JKCGCT.2026.36.1.001
