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Exploration of SiC single crystal growth by a resistive-heating-based PVT method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2026, 36(1), pp.1~5
  • DOI : 10.6111/JKCGCT.2026.36.1.001
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : February 25, 2026
  • Accepted : March 16, 2026
  • Published : March 31, 2026

Gyeong-Jun Song 1,  Ha-Jun Kim 1,  Na-Kyeong Kim 1,  Chan-Ho Park 1,  Mi-Seon Park 1,  Kwang-Hee Jung 1,  Jung-Gon Kim 1,  Lee, Won Jae 1

1동의대학교

Accredited

ABSTRACT

Currently, the only established method for stable SiC single-crystal growth is the physical vapor transport (PVT) technique. However, conventional PVT systems often require optimizing the hot-zone and insulation layouts to compensate for thermal non-uniformities inherent in large-diameter crystal growth. To address these limitations, a resistive-heating-based PVT approach has been proposed, enabling more precise and uniform thermal-field control through flexible internal heater design. In this study, a resistive-heating-type PVT furnace was newly constructed, and 4-inch SiC single crystals were grown by optimizing the hot-zone and insulation configurations. The grown crystals exhibited a slightly convex shape and achieved an average growth rate of 116 µm/hr. Ultraviolet fluorescence (UVF) imaging revealed that 4H-SiC crystals containing locally distributed 6H-SiC polytype regions were obtained. High-resolution X-ray diffraction (HR-XRD) measurements showed full width at half maximum (FWHM) values ranging from 71.1 arcsec to 115.9 arcsec. Raman spectroscopy confirmed consistent crystal quality, with the FTO (2/4) phonon mode exhibiting a FWHM of 5.5 cm-1 to 5.9 cm-1. Except for areas with 6H- SiC polytypes, the dominant 4H-SiC regions exhibited nearly stress-free characteristics with the FTO (2/4) peak close to 776 cm-1 of typical of free-standing 4H-SiC. These results demonstrate that resistive-heating-based PVT method can yield high-crystallinity, low-stress SiC single crystals, provided that polytype stability is maintained during growth.

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