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Cavity-structured seed holders for enhanced crystalline quality of SiC

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2026, 36(1), pp.50~56
  • DOI : 10.6111/JKCGCT.2026.36.1.050
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : February 25, 2026
  • Accepted : March 6, 2026
  • Published : March 31, 2026

Ye-Jin Choi 1,  Min-Gyu Kang 1,  Gi-Uk Lee 1,  Gyeong-Jun Song 1,  Na-Kyeong Kim 1,  Mi-Seon Park 1,  Kwang-Hee Jung 1,  Jung-Gon Kim 1,  Lee, Won Jae 1

1동의대학교

Accredited

ABSTRACT

In the growth of silicon carbide (SiC) single crystals using the induction-heated physical vapor transport (PVT) method, designing an innovative hot-zone structure is essential to mitigate internal thermal stress. Key design parameters, such as the top insulation characteristics and graphite seed holder geometry, play a critical role in shaping the thermal distribution. This study focuses on modifying the thickness and cavity area of the seed holder platform to achieve an optimal axial temperature gradient and uniform radial thermal distribution. Three cavity-structured designs were evaluated based on the cavity surface area relative to the platform: Design A (0 %, baseline), Design B (50 %), and Design C (80 %). Numerical simulations and experimental growth were conducted under identical growth conditions. The results revealed that the radial temperature gradient (shape of the crystal) from the center to the periphery decreased as the cavity area increased, yielding gradients of 2.6°C (concave) for Design A, 1.5°C (flat) for Design B, and 1.8°C (flat) for Design C. Comprehensive characterization via XRD 2theta-omega scans, Raman mapping for FWHM of the FTA phonon, and defect (etch pit) density analysis through surface etching confirmed that Design B exhibited the highest quality crystals. Specifically, Design B exhibited the lowest internal stress of -0.0033 GPa, superior crystalline uniformity with an average FWHM of 44.1 arcsec, and significantly reduced defect density. These findings demonstrate that precise cavity engineering of the seed holder platform is a straightforward yet highly effective strategy for achieving high-quality SiC crystals.

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