@article{ART003386879},
author={Sung Ho Ha and Geug Tae Kim},
title={Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2026},
volume={36},
number={3},
pages={131-138},
doi={10.6111/JKCGCT.2026.36.3.131}
TY - JOUR
AU - Sung Ho Ha
AU - Geug Tae Kim
TI - Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2026
VL - 36
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 131
EP - 138
SN - 1225-1429
AB - Mercury bromide (Hg₂Br₂) was selected as the crystal material for the basic applied model research of Korean spaceflight. In a vertical sealed container with an aspect ratio (length/width) of 4, computational simulations of the transport phenomena of a mixture of mercurous bromide (Hg₂Br₂) and mercury (Hg) in the source and crystal regions were performed to investigate the relationships between the crystal growth rate and the maximum rate constant with respect to changes in temperature difference. It was found that both changed linearly, and in the range of 4.78 × 10⁴ ≤ Ra ≤ 10 × 10⁴ corresponding to 0 K ≤ ΔT ≤ 60 K, the dimensionless Sherwood number in the source region was approximately 5 times larger than the dimensionless Nusselt number. The results showed that the local Nusselt number (Nuy*) and the local Sherwood number (Shy*) for the dimensionless coordinate y* in the y-axis direction in the source region are greater for ΔT = 10 K (350°C → 340°C) than for 60 K (350°C → 290 °C) over the range of 0 ≤ y* ≤ 1.
KW - Korean Spaceflight;Earth ground;Physical vapor transport
DO - 10.6111/JKCGCT.2026.36.3.131
ER -
Sung Ho Ha and Geug Tae Kim. (2026). Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 131-138.
Sung Ho Ha and Geug Tae Kim. 2026, "Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport", Journal of the Korean Crystal Growth and Crystal Technology, vol.36, no.3 pp.131-138. Available from: doi:10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha, Geug Tae Kim "Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 36.3 pp.131-138 (2026) : 131.
Sung Ho Ha, Geug Tae Kim. Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport. 2026; 36(3), 131-138. Available from: doi:10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha and Geug Tae Kim. "Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 131-138.doi: 10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha; Geug Tae Kim. Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 131-138. doi: 10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha; Geug Tae Kim. Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport. Journal of the Korean Crystal Growth and Crystal Technology. 2026; 36(3) 131-138. doi: 10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha, Geug Tae Kim. Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport. 2026; 36(3), 131-138. Available from: doi:10.6111/JKCGCT.2026.36.3.131
Sung Ho Ha and Geug Tae Kim. "Model studies in applications for fundamental research of Korean spaceflight: Diffusion-limited system during physical vapor transport" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 131-138.doi: 10.6111/JKCGCT.2026.36.3.131
