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@article{ART003386880},
author={Gyeong-Jun Song and Na-Kyeong Kim and Chan-Ho Park and Kwang-Hee Jung and SHIN Yunji and Seongmin Jeong and Kap-Ryeol Ku and Kim Jung Gon and Lee, Won Jae},
title={Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2026},
volume={36},
number={3},
pages={139-146},
doi={10.6111/JKCGCT.2026.36.3.139}

TY - JOUR
AU - Gyeong-Jun Song
AU - Na-Kyeong Kim
AU - Chan-Ho Park
AU - Kwang-Hee Jung
AU - SHIN Yunji
AU - Seongmin Jeong
AU - Kap-Ryeol Ku
AU - Kim Jung Gon
AU - Lee, Won Jae
TI - Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2026
VL - 36
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 139
EP - 146
SN - 1225-1429
AB - In this study, a crucible configuration with SiC powder loaded in both the upper and lower regions was proposed to suppress surface Si desorption and relax residual stress during high-temperature annealing of 4H-SiC wafers. After annealing at 1,900 °C and 750 Torr, the elevated Si partial pressure (24.65 mTorr) and temperature (1,901.0 °C) at the wafer edge successfully prevented surface degradation. HR-XRD analysis demonstrated that the Bragg angle shifted closest to the stress-free reference value (17.7914°), achieving maximum stress relaxation. The Raman FTO peak also shifted from 776.4 cm⁻¹ to the stress-free value of 776.9 cm⁻¹. Furthermore, wafer warpage was significantly improved, as shown by a decrease in macroscopic BOW and an increase by a factor of approximately 2.8 in microscopic curvature. XRT analysis confirmed the conversion of basal plane dislocations (BPDs) into threading edge dislocations (TEDs) near the surface, and a BPD-to-TED conversion mechanism was proposed.
KW - Silicon carbide; Annealing; Residual stress; BOW; Curvature; Basal plane dislocation; Threading edge dislocation;X-ray topography
DO - 10.6111/JKCGCT.2026.36.3.139
ER -

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon and Lee, Won Jae. (2026). Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 139-146.

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon and Lee, Won Jae. 2026, "Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques", Journal of the Korean Crystal Growth and Crystal Technology, vol.36, no.3 pp.139-146. Available from: doi:10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon, Lee, Won Jae "Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques" Journal of the Korean Crystal Growth and Crystal Technology 36.3 pp.139-146 (2026) : 139.

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon, Lee, Won Jae. Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques. 2026; 36(3), 139-146. Available from: doi:10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon and Lee, Won Jae. "Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 139-146.doi: 10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song; Na-Kyeong Kim; Chan-Ho Park; Kwang-Hee Jung; SHIN Yunji; Seongmin Jeong; Kap-Ryeol Ku; Kim Jung Gon; Lee, Won Jae. Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 139-146. doi: 10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song; Na-Kyeong Kim; Chan-Ho Park; Kwang-Hee Jung; SHIN Yunji; Seongmin Jeong; Kap-Ryeol Ku; Kim Jung Gon; Lee, Won Jae. Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques. Journal of the Korean Crystal Growth and Crystal Technology. 2026; 36(3) 139-146. doi: 10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon, Lee, Won Jae. Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques. 2026; 36(3), 139-146. Available from: doi:10.6111/JKCGCT.2026.36.3.139

Gyeong-Jun Song, Na-Kyeong Kim, Chan-Ho Park, Kwang-Hee Jung, SHIN Yunji, Seongmin Jeong, Kap-Ryeol Ku, Kim Jung Gon and Lee, Won Jae. "Suppression of Si desorption and residual stress relaxation in 4H-SiC wafers via powder-stacked annealing techniques" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 139-146.doi: 10.6111/JKCGCT.2026.36.3.139