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Reliability Evaluation of the WSW Device for Hot-carrier Immunity

  • Journal of The Korea Society of Computer and Information
  • Abbr : JKSCI
  • 2004, 9(1), pp.9-15
  • Publisher : The Korean Society Of Computer And Information
  • Research Area : Engineering > Computer Science

김현호 1 장인갑 2

1충북과학대학
2충북대학교

ABSTRACT

New WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip. It came to light that the universality of the hot carrier degradation between DC and AC stress condition exists, which indicates that the device degradation comes from the same physical mechanism for both AC and DC stress. From this universality, AC lifetime under circuit operation condition can be estimated from DC hot carrier degradation characteristics.

Citation status

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