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Analysis of Potential Risks for Garbage Collection and Wear Leveling Interference in FTL-based NAND Flash Memory

  • Journal of The Korea Society of Computer and Information
  • Abbr : JKSCI
  • 2019, 24(3), pp.1-9
  • DOI : 10.9708/jksci.2019.24.03.001
  • Publisher : The Korean Society Of Computer And Information
  • Research Area : Engineering > Computer Science
  • Received : January 15, 2019
  • Accepted : March 18, 2019
  • Published : March 29, 2019

Kim Sungho 1 Jong Wook Kwak 1

1영남대학교

Accredited

ABSTRACT

This paper presents three potential risks in an environment that simultaneously performs the garbage collection and wear leveling in NAND flash memory. These risks may not only disturb the lifespan improvement of NAND flash memory, but also impose an additional overhead of page migrations. In this paper, we analyze the interference of garbage collection and wear leveling and we also provide two theoretical considerations for lifespan prolongation of NAND flash memory. To prove two solutions of three risks, we construct a simulation, based on DiskSim 4.0 and confirm realistic impacts of three risks in NAND flash memory. In experimental results, we found negative impacts of three risks and confirmed the necessity for a coordinator module between garbage collection and wear leveling for reducing the overhead and prolonging the lifespan of NAND flash memory.

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