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@article{ART002495811},
author={LEESEUNGWOO and RYU Kwan Woo},
title={Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset},
journal={Journal of The Korea Society of Computer and Information},
issn={1598-849X},
year={2019},
volume={24},
number={8},
pages={9-17},
doi={10.9708/jksci.2019.24.08.009}

TY - JOUR
AU - LEESEUNGWOO
AU - RYU Kwan Woo
TI - Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset
JO - Journal of The Korea Society of Computer and Information
PY - 2019
VL - 24
IS - 8
PB - The Korean Society Of Computer And Information
SP - 9
EP - 17
SN - 1598-849X
AB - In this paper, we propose a block mapping technique applicable to NAND flash memory. In order to use the NAND flash memory with the operating system and the file system developed on the basis of the hard disk which is mainly used in the general PC field, it is necessary to use the system software known as the FTL (Flash Translation Layer). FTL overcomes the disadvantage of not being able to overwrite data by using the address mapping table and solves the additional features caused by the physical structure of NAND flash memory. In this paper, we propose a new mapping method based on the block mapping method for efficient use of the NAND flash memory. In the case of the proposed technique, the data modification operation is processed by using a blank page in the existing block without using an additional block for the data modification operation, thereby minimizing the block unit deletion operation in the merging operation. Also, the frequency of occurrence of the sequential write request and random write request Accordingly, by optimally adjusting the ratio of pages for recording data in a block and pages for recording data requested for modification, it is possible to optimize sequential writing and random writing by maximizing the utilization of pages in a block.
KW - Nand Flash Memory;FTL;Garbage Collection;Mapping algorithm;Block-level mapping
DO - 10.9708/jksci.2019.24.08.009
ER -

LEESEUNGWOO and RYU Kwan Woo. (2019). Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset. Journal of The Korea Society of Computer and Information, 24(8), 9-17.

LEESEUNGWOO and RYU Kwan Woo. 2019, "Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset", Journal of The Korea Society of Computer and Information, vol.24, no.8 pp.9-17. Available from: doi:10.9708/jksci.2019.24.08.009

LEESEUNGWOO, RYU Kwan Woo "Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset" Journal of The Korea Society of Computer and Information 24.8 pp.9-17 (2019) : 9.

LEESEUNGWOO, RYU Kwan Woo. Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset. 2019; 24(8), 9-17. Available from: doi:10.9708/jksci.2019.24.08.009

LEESEUNGWOO and RYU Kwan Woo. "Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset" Journal of The Korea Society of Computer and Information 24, no.8 (2019) : 9-17.doi: 10.9708/jksci.2019.24.08.009

LEESEUNGWOO; RYU Kwan Woo. Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset. Journal of The Korea Society of Computer and Information, 24(8), 9-17. doi: 10.9708/jksci.2019.24.08.009

LEESEUNGWOO; RYU Kwan Woo. Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset. Journal of The Korea Society of Computer and Information. 2019; 24(8) 9-17. doi: 10.9708/jksci.2019.24.08.009

LEESEUNGWOO, RYU Kwan Woo. Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset. 2019; 24(8), 9-17. Available from: doi:10.9708/jksci.2019.24.08.009

LEESEUNGWOO and RYU Kwan Woo. "Block Unit Mapping Technique of NAND Flash Memory Using Variable Offset" Journal of The Korea Society of Computer and Information 24, no.8 (2019) : 9-17.doi: 10.9708/jksci.2019.24.08.009