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Element to Change the Bonding Structures of SnO2 Thin Films

  • Industry Promotion Research
  • Abbr : IPR
  • 2018, 3(1), pp.1-5
  • Publisher : Industrial Promotion Institute
  • Research Area : Interdisciplinary Studies > Interdisciplinary Research
  • Received : October 16, 2017
  • Accepted : December 7, 2017
  • Published : January 31, 2018

Oh teresa 1

1청주대학교

ABSTRACT

SnO2 films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics in according to the bonding structures. The SnO2 film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. SnO2 became more crystal-structural with increasing the annealing temperature, and the current increased at SnO2 film annealed at 150 ℃ with Schottky current.

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