@article{ART000906734},
author={DeoksunYoon and WookhyunKoh and SeokkiYeo and HongH.Lee and ChinhoPark},
title={Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2002},
volume={12},
number={4},
pages={215-221}
TY - JOUR
AU - DeoksunYoon
AU - WookhyunKoh
AU - SeokkiYeo
AU - HongH.Lee
AU - ChinhoPark
TI - Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2002
VL - 12
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 215
EP - 221
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee and ChinhoPark. (2002). Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis. Journal of the Korean Crystal Growth and Crystal Technology, 12(4), 215-221.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee and ChinhoPark. 2002, "Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis", Journal of the Korean Crystal Growth and Crystal Technology, vol.12, no.4 pp.215-221.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee, ChinhoPark "Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis" Journal of the Korean Crystal Growth and Crystal Technology 12.4 pp.215-221 (2002) : 215.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee, ChinhoPark. Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis. 2002; 12(4), 215-221.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee and ChinhoPark. "Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis" Journal of the Korean Crystal Growth and Crystal Technology 12, no.4 (2002) : 215-221.
DeoksunYoon; WookhyunKoh; SeokkiYeo; HongH.Lee; ChinhoPark. Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis. Journal of the Korean Crystal Growth and Crystal Technology, 12(4), 215-221.
DeoksunYoon; WookhyunKoh; SeokkiYeo; HongH.Lee; ChinhoPark. Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis. Journal of the Korean Crystal Growth and Crystal Technology. 2002; 12(4) 215-221.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee, ChinhoPark. Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis. 2002; 12(4), 215-221.
DeoksunYoon, WookhyunKoh, SeokkiYeo, HongH.Lee and ChinhoPark. "Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis" Journal of the Korean Crystal Growth and Crystal Technology 12, no.4 (2002) : 215-221.
