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Photocurrent study on the splitting of the valence band and growth of CdIn2Te4 single crystal by Bridgman method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2003, 13(3), pp.132-138
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : March 14, 2003
  • Accepted : May 14, 2003

Kwang Joon Hong 1 Kwan Gyu Lee 1 Lee Bong-Ju 1 Park, Jin Seong 1 Dong Chan Shin 1

1조선대학교

Accredited

ABSTRACT

A stoichiometric mixture for C d I n 2 T e 4 single crystal was prepared from horizontal electric furnace. The C d I n 2 T e 4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The C d I n 2 T e 4 single crystal was evaluated to be tetragonal by the power method. The (001) growth plane of oriented C d I n 2 T e 4 single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of C d I n 2 T e 4 single crystal measured with Hall effect by van der Pauw method are 8.61 × 1016 cm − 3 and 242 cm 2 /V.s at 293 K, respectively. The temperature dependence of the energy band gap of the C d I n 2 T e 4 single crystal obtained from the absorption spectra was well described by the Varshni's relation, 1.4750 e v − ( 7.69 × 10 − 3 ) e v / k ) T 2 /(T + 2147k).The crystal field and the spin-orbit splitting energies for the valence band of the C d I n 2 T e 4 single crystal have been estimated to be 0.2704 eV and 0.1465 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δ so definitely exists in the Γ 7 states of the valence band of the C d I n 2 T e 4 single crystal. The three photocurrent peaks observed at 10 K are ascribed to the A 1 − B 1 − and Cl-exciton peaks for n = 1.

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