@article{ART000912139},
author={Soo-JinJeong and So-Jung Kim},
title={Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2003},
volume={13},
number={5},
pages={247-253}
TY - JOUR
AU - Soo-JinJeong
AU - So-Jung Kim
TI - Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2003
VL - 13
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 247
EP - 253
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
Soo-JinJeong and So-Jung Kim. (2003). Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth. Journal of the Korean Crystal Growth and Crystal Technology, 13(5), 247-253.
Soo-JinJeong and So-Jung Kim. 2003, "Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth", Journal of the Korean Crystal Growth and Crystal Technology, vol.13, no.5 pp.247-253.
Soo-JinJeong, So-Jung Kim "Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth" Journal of the Korean Crystal Growth and Crystal Technology 13.5 pp.247-253 (2003) : 247.
Soo-JinJeong, So-Jung Kim. Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth. 2003; 13(5), 247-253.
Soo-JinJeong and So-Jung Kim. "Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth" Journal of the Korean Crystal Growth and Crystal Technology 13, no.5 (2003) : 247-253.
Soo-JinJeong; So-Jung Kim. Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth. Journal of the Korean Crystal Growth and Crystal Technology, 13(5), 247-253.
Soo-JinJeong; So-Jung Kim. Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth. Journal of the Korean Crystal Growth and Crystal Technology. 2003; 13(5) 247-253.
Soo-JinJeong, So-Jung Kim. Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth. 2003; 13(5), 247-253.
Soo-JinJeong and So-Jung Kim. "Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth" Journal of the Korean Crystal Growth and Crystal Technology 13, no.5 (2003) : 247-253.
