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Scintillating properties of Bi-doped Y3Ga5O12

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(6), pp.233~235
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Andrey Novoselov 1,  Akira Yoshikawa 2,  Martin Nikl 3,  Tsuguo Fukuda 1

1Tohoku University
2Japan Science and Technology Agency
3Institute of Physics AS CR

Accredited

ABSTRACT

Shaped single crystals of Bi : Y3Ga5O12 (Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy 6s2 6s6p transition of Bi3+, while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited Bi3+ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.

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