@article{ART000928627},
author={Park Chi Sun},
title={Characterization of via etch by enhanced reactive ion etching},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2004},
volume={14},
number={6},
pages={236-243}
TY - JOUR
AU - Park Chi Sun
TI - Characterization of via etch by enhanced reactive ion etching
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2004
VL - 14
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 236
EP - 243
SN - 1225-1429
AB - The oxide etching process was characterized in a magnetically enhanced reactive ion etching (MERIE) reactor with a CHF3/CF4 gas chemistry. A statistical experimental design plus one center point was used to characterize relationships between process factors and etch response. The etch response modeled are etch rate, etch selectivity to TiN and uniformity. Etching uniformity was improved with increasing CF4 flow ratio, increasing source power, and increasing pressure depending on source power. Characterization of via etching in CHF3/CF4 MERIE using neural networks was successfully executed giving to highly valuable information about etching mechanism and optimum etching condition. It was found that etching uniformity was closely related to surface polymerization, DC bias, TiN and uniformity.
KW - Oxide etching;Uniformity;Via etching;Etching mechanism
DO -
UR -
ER -
Park Chi Sun. (2004). Characterization of via etch by enhanced reactive ion etching. Journal of the Korean Crystal Growth and Crystal Technology, 14(6), 236-243.
Park Chi Sun. 2004, "Characterization of via etch by enhanced reactive ion etching", Journal of the Korean Crystal Growth and Crystal Technology, vol.14, no.6 pp.236-243.
Park Chi Sun "Characterization of via etch by enhanced reactive ion etching" Journal of the Korean Crystal Growth and Crystal Technology 14.6 pp.236-243 (2004) : 236.
Park Chi Sun. Characterization of via etch by enhanced reactive ion etching. 2004; 14(6), 236-243.
Park Chi Sun. "Characterization of via etch by enhanced reactive ion etching" Journal of the Korean Crystal Growth and Crystal Technology 14, no.6 (2004) : 236-243.
Park Chi Sun. Characterization of via etch by enhanced reactive ion etching. Journal of the Korean Crystal Growth and Crystal Technology, 14(6), 236-243.
Park Chi Sun. Characterization of via etch by enhanced reactive ion etching. Journal of the Korean Crystal Growth and Crystal Technology. 2004; 14(6) 236-243.
Park Chi Sun. Characterization of via etch by enhanced reactive ion etching. 2004; 14(6), 236-243.
Park Chi Sun. "Characterization of via etch by enhanced reactive ion etching" Journal of the Korean Crystal Growth and Crystal Technology 14, no.6 (2004) : 236-243.
