@article{ART001112656},
author={Myung-Seok Hong and Kwang Joon Hong},
title={Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2004},
volume={14},
number={6},
pages={244-252}
TY - JOUR
AU - Myung-Seok Hong
AU - Kwang Joon Hong
TI - Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2004
VL - 14
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 244
EP - 252
SN - 1225-1429
AB - A stoichiometric mixture of evaporating materials for CuInSe2 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, CuInSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 620oC and 410oC, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe2 single crystal thin films measured with Hall effect by van der Pauw method are 9.62?016 cm-3 and 296 cm2/V톝 at 293 K, respectively. The temperature dependence of the energy band gap of the CuInSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.1851 eV - (8.99?0-4 eV/K)T2/(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe2 have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Dso definitely exists in the G6 states of the valence band of the CuInSe2. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-, and C1-exciton peaks for n = 1.
KW - Hot wall epitaxy;Single crystal thin film;Optical absorption;Photocurrent spectrum;Crystal field splitting;Spin-orbit splitting
DO -
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Myung-Seok Hong and Kwang Joon Hong. (2004). Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 14(6), 244-252.
Myung-Seok Hong and Kwang Joon Hong. 2004, "Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.14, no.6 pp.244-252.
Myung-Seok Hong, Kwang Joon Hong "Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 14.6 pp.244-252 (2004) : 244.
Myung-Seok Hong, Kwang Joon Hong. Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy. 2004; 14(6), 244-252.
Myung-Seok Hong and Kwang Joon Hong. "Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 14, no.6 (2004) : 244-252.
Myung-Seok Hong; Kwang Joon Hong. Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 14(6), 244-252.
Myung-Seok Hong; Kwang Joon Hong. Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2004; 14(6) 244-252.
Myung-Seok Hong, Kwang Joon Hong. Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy. 2004; 14(6), 244-252.
Myung-Seok Hong and Kwang Joon Hong. "Growth and photocurrent study on the splitting of the valence band forCuInSe2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 14, no.6 (2004) : 244-252.
