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Growth behavior and optical property of ZnO epitaxial films

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(6), pp.253-256
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Kang, Seung-Min 1

1한서대학교

Accredited

ABSTRACT

Growth of ZnO epitaxial films have been carried out on (0001) sapphire substrates by RF magnetron sputtering. The single crystalline ZnO films of the thickness about 400~500 mm were grown successfully. At the various substrate temperatures of 200~600oC, the growth behavior and optical properties of the epitaxial films have been characterized. As-grown ZnO films were annealed at the temperatures of 400, 600 and 800oC respectively in order to characterize the optical properties. The carrier concentration of ZnO films annealed at the temperature of 600oC was measured 2.6?016 cm-3 by Hall measurements.

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