@article{ART000933371},
author={Junho Choy},
title={Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2004},
volume={14},
number={2},
pages={47-49}
TY - JOUR
AU - Junho Choy
TI - Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2004
VL - 14
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 47
EP - 49
SN - 1225-1429
AB - Gate protection SiNx as an alternative to a conventional re-oxidation proces in Dynamic Random AcesMemory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but alsosave the thermal budget due to the re-oxidation. The protection SiNx process is applied to the poly-Si gate, and its deviceperformance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectricintegrity show that etch damage-curing capability of protection SiNx is comparable to the re-oxidation process. In addition,the hot carrier immunity of the SiNx deposited gate is superior to that of re-oxidation procesed gate.
KW - Dynamic Random Acces Memory;Metal-oxide-silicon field-effect transistor;Gate;Breakdown;Hot carrier
DO -
UR -
ER -
Junho Choy. (2004). Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances. Journal of the Korean Crystal Growth and Crystal Technology, 14(2), 47-49.
Junho Choy. 2004, "Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances", Journal of the Korean Crystal Growth and Crystal Technology, vol.14, no.2 pp.47-49.
Junho Choy "Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances" Journal of the Korean Crystal Growth and Crystal Technology 14.2 pp.47-49 (2004) : 47.
Junho Choy. Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances. 2004; 14(2), 47-49.
Junho Choy. "Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances" Journal of the Korean Crystal Growth and Crystal Technology 14, no.2 (2004) : 47-49.
Junho Choy. Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances. Journal of the Korean Crystal Growth and Crystal Technology, 14(2), 47-49.
Junho Choy. Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances. Journal of the Korean Crystal Growth and Crystal Technology. 2004; 14(2) 47-49.
Junho Choy. Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances. 2004; 14(2), 47-49.
Junho Choy. "Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances" Journal of the Korean Crystal Growth and Crystal Technology 14, no.2 (2004) : 47-49.
