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Electrical charateristics of MIS BST thin films

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(3), pp.90~94
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Park Chi Sun 1

1한서대학교

Accredited

ABSTRACT

The variation of electrical properties of (Ba,Sr)TiO3 [BST] thin films for Metal-Insulator-Semiconductor (MIS)capacitors was investigated. BST thin films were deposited on p-Si(10) substrates by the RF magnetron sputtering withtemperature range of 500~600oC. The dielectric properties of MIS capacitors consisting of Al/BST/SiO2/Si sandwichstructure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygenpressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage curent was reduced in MIS capacitorwith high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showedrelatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. The chargestate densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applyingSiO2 layer between BST thin films and Si substrate, low leakage current of 10-10 order was observed.

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