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@article{ART000933486},
author={Junho Choy},
title={Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2004},
volume={14},
number={3},
pages={95-100}

TY - JOUR
AU - Junho Choy
TI - Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2004
VL - 14
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 95
EP - 100
SN - 1225-1429
AB - This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts withrespect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the aglomeration of thecoherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-differencenumerical method. The interface atomic difusion is taken to be the dominant transport mechanism where both capilarityand elastic strain are considered for the driving forces. Under plane strain condition with elasticaly homogeneous andanisotropic system with cubic symetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the filmthickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibriumaspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only afunction of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since theequilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to siliconarea, and may deteriorate the electrical performances.
KW - Silicide;Electrical contact;Elastic strain;Epitaxy;Coherent
DO -
UR -
ER -

Junho Choy. (2004). Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications. Journal of the Korean Crystal Growth and Crystal Technology, 14(3), 95-100.

Junho Choy. 2004, "Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications", Journal of the Korean Crystal Growth and Crystal Technology, vol.14, no.3 pp.95-100.

Junho Choy "Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications" Journal of the Korean Crystal Growth and Crystal Technology 14.3 pp.95-100 (2004) : 95.

Junho Choy. Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications. 2004; 14(3), 95-100.

Junho Choy. "Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications" Journal of the Korean Crystal Growth and Crystal Technology 14, no.3 (2004) : 95-100.

Junho Choy. Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications. Journal of the Korean Crystal Growth and Crystal Technology, 14(3), 95-100.

Junho Choy. Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications. Journal of the Korean Crystal Growth and Crystal Technology. 2004; 14(3) 95-100.

Junho Choy. Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications. 2004; 14(3), 95-100.

Junho Choy. "Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications" Journal of the Korean Crystal Growth and Crystal Technology 14, no.3 (2004) : 95-100.