@article{ART000955924},
author={KIM YOUNG KWAN and Kim Chong Bum and 김대일},
title={The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={2},
pages={45-50}
TY - JOUR
AU - KIM YOUNG KWAN
AU - Kim Chong Bum
AU - 김대일
TI - The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 45
EP - 50
SN - 1225-1429
AB - During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases, multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.
KW - Mechanical damage;Dislocation loop;Stacking faults;Silicon crystal
DO -
UR -
ER -
KIM YOUNG KWAN, Kim Chong Bum and 김대일. (2005). The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 45-50.
KIM YOUNG KWAN, Kim Chong Bum and 김대일. 2005, "The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.2 pp.45-50.
KIM YOUNG KWAN, Kim Chong Bum, 김대일 "The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation" Journal of the Korean Crystal Growth and Crystal Technology 15.2 pp.45-50 (2005) : 45.
KIM YOUNG KWAN, Kim Chong Bum, 김대일. The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation. 2005; 15(2), 45-50.
KIM YOUNG KWAN, Kim Chong Bum and 김대일. "The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 45-50.
KIM YOUNG KWAN; Kim Chong Bum; 김대일. The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 45-50.
KIM YOUNG KWAN; Kim Chong Bum; 김대일. The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(2) 45-50.
KIM YOUNG KWAN, Kim Chong Bum, 김대일. The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation. 2005; 15(2), 45-50.
KIM YOUNG KWAN, Kim Chong Bum and 김대일. "The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 45-50.
