@article{ART000955926},
author={Jwayeon Kim},
title={The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={2},
pages={57-60}
TY - JOUR
AU - Jwayeon Kim
TI - The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 57
EP - 60
SN - 1225-1429
AB - Semiconductor carbon nanotube was grown on oxided silicon wafer with atmosphere pressure chemical vapor deposition (APCVD) method and investigated the electrical property after thermal oxidation at 300oC in air. The electrical property was measured at room temperature in air after thermal oxidation at 300oC for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at 300oC in air. Some removed area of carbon nanotube surface was shown with transmission electron microscopy (TEM) after thermal oxidation for 6 hours at 300oC in air.
KW - Semiconductor;Carbon;Nanotube;LPCVD;Thermal;Oxidation;AFM;TEM;Electrical;Metallic
DO -
UR -
ER -
Jwayeon Kim. (2005). The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 57-60.
Jwayeon Kim. 2005, "The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.2 pp.57-60.
Jwayeon Kim "The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air" Journal of the Korean Crystal Growth and Crystal Technology 15.2 pp.57-60 (2005) : 57.
Jwayeon Kim. The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air. 2005; 15(2), 57-60.
Jwayeon Kim. "The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 57-60.
Jwayeon Kim. The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 57-60.
Jwayeon Kim. The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(2) 57-60.
Jwayeon Kim. The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air. 2005; 15(2), 57-60.
Jwayeon Kim. "The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at 300oC in air" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 57-60.
