@article{ART001112704},
author={Chang-Sam Kim and HAN KYONG SOP and Shinwoo Kim},
title={Growth of silicon nitride whiskers using tailered pores},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={2},
pages={61-67}
TY - JOUR
AU - Chang-Sam Kim
AU - HAN KYONG SOP
AU - Shinwoo Kim
TI - Growth of silicon nitride whiskers using tailered pores
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 61
EP - 67
SN - 1225-1429
AB - In this study a new growing method of silicon nitride whiskers in the inside of large pores made intentionally during the sintering was conducted. Pore size, pore vol%, and nitrogen pressure were used as experimental variables. Silicon nitride whiskers were well grown in the inside of pores with low pore vol% range from 14 to 27 but not grown with high pore vol% such as 39 and 50. On the other hand, pore size and nitrogen pressure did not have any influence on the whisker growth. Therefore the most important factor to grow silicon nitride whisker in the inside of large pores during sintering was to make pores isolated or closed.
KW - Silicon nitride whiskers;Pore volume;Isolated pore;Nitrogen pressure;Sintering
DO -
UR -
ER -
Chang-Sam Kim, HAN KYONG SOP and Shinwoo Kim. (2005). Growth of silicon nitride whiskers using tailered pores. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 61-67.
Chang-Sam Kim, HAN KYONG SOP and Shinwoo Kim. 2005, "Growth of silicon nitride whiskers using tailered pores", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.2 pp.61-67.
Chang-Sam Kim, HAN KYONG SOP, Shinwoo Kim "Growth of silicon nitride whiskers using tailered pores" Journal of the Korean Crystal Growth and Crystal Technology 15.2 pp.61-67 (2005) : 61.
Chang-Sam Kim, HAN KYONG SOP, Shinwoo Kim. Growth of silicon nitride whiskers using tailered pores. 2005; 15(2), 61-67.
Chang-Sam Kim, HAN KYONG SOP and Shinwoo Kim. "Growth of silicon nitride whiskers using tailered pores" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 61-67.
Chang-Sam Kim; HAN KYONG SOP; Shinwoo Kim. Growth of silicon nitride whiskers using tailered pores. Journal of the Korean Crystal Growth and Crystal Technology, 15(2), 61-67.
Chang-Sam Kim; HAN KYONG SOP; Shinwoo Kim. Growth of silicon nitride whiskers using tailered pores. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(2) 61-67.
Chang-Sam Kim, HAN KYONG SOP, Shinwoo Kim. Growth of silicon nitride whiskers using tailered pores. 2005; 15(2), 61-67.
Chang-Sam Kim, HAN KYONG SOP and Shinwoo Kim. "Growth of silicon nitride whiskers using tailered pores" Journal of the Korean Crystal Growth and Crystal Technology 15, no.2 (2005) : 61-67.
