@article{ART000974442},
author={Jong Geon Choi and SEOK, JEONG-WON},
title={A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={5},
pages={175-181}
TY - JOUR
AU - Jong Geon Choi
AU - SEOK, JEONG-WON
TI - A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 175
EP - 181
SN - 1225-1429
AB - Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were comparedin terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted2 is an insulator at roomtemperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6 cm,inside diameter : 4 cm, thickness : 0.2 cm) was embedded into TiO2 powder (anatase phase, CERAC, 3N) for initial RFinduction heating. Important factors of the skul melting method are electric resistivity of materials at their melting point,working frequency of RF generator and cold crucible size. In this study, electric resitivity of TiO2 (102~101 Ω· m) at itsthe cold crucible was 11 and 14 cm, respectively, which were determined by considering of the penetration depth(0.36~1.13 cm) and the frequency of RF generator.
KW - Skul melting;Ti metal ring;Rutile single crystal;Penetration depth;Cold crucible
DO -
UR -
ER -
Jong Geon Choi and SEOK, JEONG-WON. (2005). A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator. Journal of the Korean Crystal Growth and Crystal Technology, 15(5), 175-181.
Jong Geon Choi and SEOK, JEONG-WON. 2005, "A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.5 pp.175-181.
Jong Geon Choi, SEOK, JEONG-WON "A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator" Journal of the Korean Crystal Growth and Crystal Technology 15.5 pp.175-181 (2005) : 175.
Jong Geon Choi, SEOK, JEONG-WON. A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator. 2005; 15(5), 175-181.
Jong Geon Choi and SEOK, JEONG-WON. "A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator" Journal of the Korean Crystal Growth and Crystal Technology 15, no.5 (2005) : 175-181.
Jong Geon Choi; SEOK, JEONG-WON. A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator. Journal of the Korean Crystal Growth and Crystal Technology, 15(5), 175-181.
Jong Geon Choi; SEOK, JEONG-WON. A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(5) 175-181.
Jong Geon Choi, SEOK, JEONG-WON. A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator. 2005; 15(5), 175-181.
Jong Geon Choi and SEOK, JEONG-WON. "A study on the growth mechanism of rutile single crystal by skull melting method and conditionsof RF generator" Journal of the Korean Crystal Growth and Crystal Technology 15, no.5 (2005) : 175-181.
