@article{ART001039854},
author={이충현 and Min Yang and Kyoung Hwa Kim and Hyung Soo Ahn and Jong Seong Bae and SUNLYEONG HWANG and 장근숙 and Hunsoo Jeon and Kim Suck Whan and 장성환 and 이수민 and 박길한 and M. Koike},
title={Growth and characteristics of HVPE thick a-plane GaN layers},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={1},
pages={1-5}
TY - JOUR
AU - 이충현
AU - Min Yang
AU - Kyoung Hwa Kim
AU - Hyung Soo Ahn
AU - Jong Seong Bae
AU - SUNLYEONG HWANG
AU - 장근숙
AU - Hunsoo Jeon
AU - Kim Suck Whan
AU - 장성환
AU - 이수민
AU - 박길한
AU - M. Koike
TI - Growth and characteristics of HVPE thick a-plane GaN layers
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 5
SN - 1225-1429
AB - The structural and morphological properties of planar, nonpolar (11-20) a-plane GaN layers grown by hydride vapor phase epitaxy on (1-102) r-plane sapphire substrates are characterized. We report on the effect of low temperature
(500/550/600/660 oC) AlN buffer layers on the structural properties of HVPE grown a-GaN layers. And for the comparison, low temperature GaN and InGaN buffer layers are also tried for the growth of a-plane GaN layers. The structural geometry
of a-GaN layers is severely affected on the growth condition of low temperature buffer layers. The most planar a-GaN could be obtained with GaCl3 pretreatment at the growth temperature of 820oC.
KW - HVPE;Nonpolar;R-plane sapphire;a-plane GaN;Mixed-source;AlN;InGaN;GaN
DO -
UR -
ER -
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. (2007). Growth and characteristics of HVPE thick a-plane GaN layers. Journal of the Korean Crystal Growth and Crystal Technology, 17(1), 1-5.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. 2007, "Growth and characteristics of HVPE thick a-plane GaN layers", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.1 pp.1-5.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike "Growth and characteristics of HVPE thick a-plane GaN layers" Journal of the Korean Crystal Growth and Crystal Technology 17.1 pp.1-5 (2007) : 1.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike. Growth and characteristics of HVPE thick a-plane GaN layers. 2007; 17(1), 1-5.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. "Growth and characteristics of HVPE thick a-plane GaN layers" Journal of the Korean Crystal Growth and Crystal Technology 17, no.1 (2007) : 1-5.
이충현; Min Yang; Kyoung Hwa Kim; Hyung Soo Ahn; Jong Seong Bae; SUNLYEONG HWANG; 장근숙; Hunsoo Jeon; Kim Suck Whan; 장성환; 이수민; 박길한; M. Koike. Growth and characteristics of HVPE thick a-plane GaN layers. Journal of the Korean Crystal Growth and Crystal Technology, 17(1), 1-5.
이충현; Min Yang; Kyoung Hwa Kim; Hyung Soo Ahn; Jong Seong Bae; SUNLYEONG HWANG; 장근숙; Hunsoo Jeon; Kim Suck Whan; 장성환; 이수민; 박길한; M. Koike. Growth and characteristics of HVPE thick a-plane GaN layers. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(1) 1-5.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike. Growth and characteristics of HVPE thick a-plane GaN layers. 2007; 17(1), 1-5.
이충현, Min Yang, Kyoung Hwa Kim, Hyung Soo Ahn, Jong Seong Bae, SUNLYEONG HWANG, 장근숙, Hunsoo Jeon, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. "Growth and characteristics of HVPE thick a-plane GaN layers" Journal of the Korean Crystal Growth and Crystal Technology 17, no.1 (2007) : 1-5.
