@article{ART001039855},
author={Hunsoo Jeon and Kyoung Hwa Kim and Min Yang and Hyung Soo Ahn and 황선령 and 장근숙 and 이충현 and Kim Suck Whan and 장성환 and 이수민 and 박길한 and M. Koike},
title={HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={1},
pages={6-10}
TY - JOUR
AU - Hunsoo Jeon
AU - Kyoung Hwa Kim
AU - Min Yang
AU - Hyung Soo Ahn
AU - 황선령
AU - 장근숙
AU - 이충현
AU - Kim Suck Whan
AU - 장성환
AU - 이수민
AU - 박길한
AU - M. Koike
TI - HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 6
EP - 10
SN - 1225-1429
AB - The a-plane GaN layer on r-plane Al2O3 substrate is grown by mixed-source hydride vapor phase epitaxy
(HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists
of a GaN layer, an InGaN layer and a Mg-doped GaN layer. NH3 and gallium (or indium) chloride formed by HCl which is flown over mixed-source are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and NH3 are
maintained at 10 sccm and 500 sccm, respectively. The temperature of GaN source zone is 650oC. In case of InGaN, the temperature of source zone is 900oC. The growth temperatures of GaN and InGaN layers are 820oC and 850oC,
respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full
width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.
KW - HVPE;R-plane sapphire;Heterostructure;a-plane GaN;Multi-sliding boat;Mixed-source
DO -
UR -
ER -
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. (2007). HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 17(1), 6-10.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. 2007, "HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.1 pp.6-10.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike "HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 17.1 pp.6-10 (2007) : 6.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike. HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate. 2007; 17(1), 6-10.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. "HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 17, no.1 (2007) : 6-10.
Hunsoo Jeon; Kyoung Hwa Kim; Min Yang; Hyung Soo Ahn; 황선령; 장근숙; 이충현; Kim Suck Whan; 장성환; 이수민; 박길한; M. Koike. HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 17(1), 6-10.
Hunsoo Jeon; Kyoung Hwa Kim; Min Yang; Hyung Soo Ahn; 황선령; 장근숙; 이충현; Kim Suck Whan; 장성환; 이수민; 박길한; M. Koike. HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(1) 6-10.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한, M. Koike. HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate. 2007; 17(1), 6-10.
Hunsoo Jeon, Kyoung Hwa Kim, Min Yang, Hyung Soo Ahn, 황선령, 장근숙, 이충현, Kim Suck Whan, 장성환, 이수민, 박길한 and M. Koike. "HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 17, no.1 (2007) : 6-10.
