Refractive index control of F-doped SiOC : H thin films by addition fluorine (Fluorine 첨가에 의한 F-doped SiOC : H 박막의 저 굴절률 특성)

Seok Gyu Yoon (윤석규); YOON, DAEHO (윤대호); 강삼묵; 정원석; 박우정

Refractive index control of F-doped SiOC : H thin films by addition fluorine

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2007, 17(2), pp.47-51
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Seok Gyu Yoon ¹, YOON, DAEHO ¹, 강삼묵 ¹, 정원석 ¹, 박우정 ¹

¹성균관대학교

Accredited

ABSTRACT

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios (SiH4, CF4 and N2O). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As N2O gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and 100 o C without N2O gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60W to 180W, which results in the decrease of refractive index.

KEYWORDS

F-doped SiOC : H, PECVD, Refractive index, Fluorine

Citation status

* References for papers published after 2023 are currently being built.

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