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@article{ART001051959},
author={Seok Gyu Yoon and YOON, DAEHO and 강삼묵 and 정원석 and 박우정},
title={Refractive index control of F-doped SiOC : H thin films by addition fluorine},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={2},
pages={47-51}

TY - JOUR
AU - Seok Gyu Yoon
AU - YOON, DAEHO
AU - 강삼묵
AU - 정원석
AU - 박우정
TI - Refractive index control of F-doped SiOC : H thin films by addition fluorine
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 47
EP - 51
SN - 1225-1429
AB - F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios (SiH4, CF4 and N2O). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As N2O gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and 100 o C without N2O gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60W to 180W, which results in the decrease of refractive index.
KW - F-doped SiOC : H;PECVD;Refractive index;Fluorine
DO -
UR -
ER -

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석 and 박우정. (2007). Refractive index control of F-doped SiOC : H thin films by addition fluorine. Journal of the Korean Crystal Growth and Crystal Technology, 17(2), 47-51.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석 and 박우정. 2007, "Refractive index control of F-doped SiOC : H thin films by addition fluorine", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.2 pp.47-51.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석, 박우정 "Refractive index control of F-doped SiOC : H thin films by addition fluorine" Journal of the Korean Crystal Growth and Crystal Technology 17.2 pp.47-51 (2007) : 47.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석, 박우정. Refractive index control of F-doped SiOC : H thin films by addition fluorine. 2007; 17(2), 47-51.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석 and 박우정. "Refractive index control of F-doped SiOC : H thin films by addition fluorine" Journal of the Korean Crystal Growth and Crystal Technology 17, no.2 (2007) : 47-51.

Seok Gyu Yoon; YOON, DAEHO; 강삼묵; 정원석; 박우정. Refractive index control of F-doped SiOC : H thin films by addition fluorine. Journal of the Korean Crystal Growth and Crystal Technology, 17(2), 47-51.

Seok Gyu Yoon; YOON, DAEHO; 강삼묵; 정원석; 박우정. Refractive index control of F-doped SiOC : H thin films by addition fluorine. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(2) 47-51.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석, 박우정. Refractive index control of F-doped SiOC : H thin films by addition fluorine. 2007; 17(2), 47-51.

Seok Gyu Yoon, YOON, DAEHO, 강삼묵, 정원석 and 박우정. "Refractive index control of F-doped SiOC : H thin films by addition fluorine" Journal of the Korean Crystal Growth and Crystal Technology 17, no.2 (2007) : 47-51.