@article{ART001051960},
author={김은도 and SeongJin Cho and 손영호 and 황도원},
title={Property of molecular beam epitaxy-grown ZnSe/GaAs},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2007},
volume={17},
number={2},
pages={52-56}
TY - JOUR
AU - 김은도
AU - SeongJin Cho
AU - 손영호
AU - 황도원
TI - Property of molecular beam epitaxy-grown ZnSe/GaAs
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2007
VL - 17
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 52
EP - 56
SN - 1225-1429
AB - We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the
characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy
(AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD)
and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed
photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.
KW - Ultra high vacuum (UHV);Molecular beam epitaxy (MBE);Effusion cell;plasma cell;ZnSea
DO -
UR -
ER -
김은도, SeongJin Cho, 손영호 and 황도원. (2007). Property of molecular beam epitaxy-grown ZnSe/GaAs. Journal of the Korean Crystal Growth and Crystal Technology, 17(2), 52-56.
김은도, SeongJin Cho, 손영호 and 황도원. 2007, "Property of molecular beam epitaxy-grown ZnSe/GaAs", Journal of the Korean Crystal Growth and Crystal Technology, vol.17, no.2 pp.52-56.
김은도, SeongJin Cho, 손영호, 황도원 "Property of molecular beam epitaxy-grown ZnSe/GaAs" Journal of the Korean Crystal Growth and Crystal Technology 17.2 pp.52-56 (2007) : 52.
김은도, SeongJin Cho, 손영호, 황도원. Property of molecular beam epitaxy-grown ZnSe/GaAs. 2007; 17(2), 52-56.
김은도, SeongJin Cho, 손영호 and 황도원. "Property of molecular beam epitaxy-grown ZnSe/GaAs" Journal of the Korean Crystal Growth and Crystal Technology 17, no.2 (2007) : 52-56.
김은도; SeongJin Cho; 손영호; 황도원. Property of molecular beam epitaxy-grown ZnSe/GaAs. Journal of the Korean Crystal Growth and Crystal Technology, 17(2), 52-56.
김은도; SeongJin Cho; 손영호; 황도원. Property of molecular beam epitaxy-grown ZnSe/GaAs. Journal of the Korean Crystal Growth and Crystal Technology. 2007; 17(2) 52-56.
김은도, SeongJin Cho, 손영호, 황도원. Property of molecular beam epitaxy-grown ZnSe/GaAs. 2007; 17(2), 52-56.
김은도, SeongJin Cho, 손영호 and 황도원. "Property of molecular beam epitaxy-grown ZnSe/GaAs" Journal of the Korean Crystal Growth and Crystal Technology 17, no.2 (2007) : 52-56.
